FEDL22660-01
ML22660
●
DC characteristics
SPV
DD
≥DV
DD
=IOV
DD
=2.7 to 5.5V, DGND=SPGND=0V, Ta=-40 to +85°C, Load capacitance of output pin =15pF(max.)
Parameter
Symbol
Condition
Applicable pin
Min.
Typ.
*1
Max.
Unit
"H" input voltage 1
V
IH1
—
SAD0/SAD1/SAD2/
SDA/SCL/
XT/RESETB/TEST0
0.8×DV
DD
—
DV
DD
V
"H" input voltage 2
V
IH2
—
ERSI/EROFF
0.8×IOV
DD
—
IOV
DD
V
"L" input voltage 1
V
IL1
—
SAD0/SAD1/SAD2/
SDA/SCL/
XT/RESETB/TEST0
0
—
0.2×DV
DD
V
"L" input voltage 2
V
IL2
—
EROFF/ERSI
0
—
0.2×IOV
DD
V
"H" output voltage 1
V
OH1
I
OH
= -50µA
XTB
DV
DD
-0.4
—
—
V
"H" output voltage 2
V
OH2
I
OH
= -1mA
CBUSYB/STATUS1/
STATUS2
DV
DD
-0.4
—
—
V
"H" output voltage 3
V
OH3
I
OH
= -1mA
ERSO
IOV
DD
-0.4
—
—
V
"L" output voltage 1
V
OL1
I
OL
= 50µA
XTB
—
—
0.4
V
"L" output voltage 2
V
OL2
I
OL
= 2mA
CBUSYB/STATUS1/
STATUS2
—
—
0.4
V
"L" output voltage 3
V
OL3
I
OL
= 2mA
ERCSB/ERSCK/
ERSO
—
—
0.4
V
"L" output voltage 4
V
OL4
I
OL
= 3mA
SDA/SCL
—
—
0.4
V
Output leakage
current 1
I
OOH1
VOH=DV
DD
(in high-impedance state)
SDA/SCL/
—
—
10
µA
I
OOL1
VOL=DGND
(in high-impedance state)
–10
—
—
µA
Output leakage
current 2
I
OOH2
VOH=IOV
DD
(in high-impedance state)
ERCSB/ERSCK/
ERSO
—
—
10
µA
I
OOL2
VOL=DGND
(in high-impedance state)
–10
—
—
µA
"H" input current 1
I
IH1
V
IH
= DV
DD
XT
0.8
5.0
20
µA
"H" input current 2
I
IH2
V
IH
= DV
DD
RESETB/
SDA/SCL
—
—
10
µA
"H" input current 3
I
IH3
V
IH
= DV
DD
TEST0
20
500
1000
µA
"H" input current 4
I
IH4
V
IH
= IOV
DD
ERCSB/ERSCK
—
—
10
µA
"H" input current 5
I
IH5
V
IH
= IOV
DD
EROFF
20
500
1000
µA
"H" input current 6
I
IH6
V
IH
= IOV
DD
ERSI
2
100
400
µA
"L" input current 1
I
IL1
V
IL
= DGND
XT
–20
–5.0
–0.8
µA
"L" input current 2
I
IL2
V
IL
= DGND
SDA/SCL/EROFF/
TEST0
–10
—
—
µA
"L" input current 3
I
IL3
V
IL
= DGND
RESETB
–400
–100
–2
µA
During playback
Current
consumption
I
DDO
f
OSC
=4.096MHz
Fs=48kHz, f=1kHz,
During HQADPCM
playback
SPP/SPM No output
load
—
—
—
55
*2
mA
Power-down
Current
consumption
I
DDS
Ta=-40 to +55°C
—
—
1
10.0
*2
µA
Ta=-40 to +85°C
—
—
1
30.0
*2
µA
*1 Typ. : DV
DD
=SPV
DD
=IOV
DD
=5.0V,DGND=SPGND=0 V,Ta=25°C
*2 Total values of the DV
DD
pin, SPV
DD
pin, and IOV
DD
pin
11/116
Summary of Contents for LAPIS Semiconductor ML22660
Page 107: ...FEDL22660 01 ML22660 107 116 ...