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E3X-DA-S
10
E3X-DA
@
-S (
@
: 21/51/7/9/0)
E3X-DA
@
F-S(
@
: 21/51/7/9)
Vacuum-resistant
*
The fiber length is 1 m on each side, so the sensing distance is given as 2,000 mm.
FPD, Semiconductors, and Solar Cells
*
The fiber length is 2 m on each side, so the sensing distance is given as 4,000 mm.
Note:
The High-speed Mode cannot be used with the E3X-DA0-S.
Sensing
method
Heat-resistant temperature
Model
Sensing distance (mm)
Tough mode
High-resolution
mode
Standard
mode
High-speed
mode
Super-high-
speed mode
Through-
beam
120 °C
E32-T51V 1M
720
520
400
260
100
E32-T51V 1M + E39-F1V
2,000
*
2,000
*
2,000
*
1,360
520
200 °C
E32-T84SV 1M
1,760
1,250
950
640
260
Sensing
method
Application
Operating
temperature
Model
Sensing distance (mm)
Tough mode
High-resolution
mode
Standard
mode
High-speed
mode
Super-high-
speed mode
Limited-
reflective
Glass presence detection
70 °C
E32-L16-N 2M
0 to 15
0 to 12
Glass substrate alignment
E32-A08 2M
10 to 20
−
300 °C
E32-A08H2 2M
70 °C
E32-A12 2M
12 to 30
−
Glass substrate mapping
E32-A09 2M
15 to 38
−
300 °C
E32-A09H2 2M
20 to 30
−
Wet processes:
Cleaning, Resist
developing and etching
60 °C
E32-L11FP 2M
8 to 20 mm from tip of lens (Recommended detection distance: 11 mm),
19 to 31 mm from center of mounting hole A (Recommended detection distance: 22 mm)
Wet process:
Resist stripping
85 °C
E32-L11FS 2M
8 to 20 mm from tip of lens (Recommended detection distance: 11 mm),
32 to 44 mm from center of mounting hole A (Recommended detection distance: 35 mm)
Through-
beam
Wafer mapping
70 °C
E32-A03 2M
3,220
2,300
1,780
1,200
500
E32-A03-1 2M
E32-A04 2M
1,280
920
680
450
200
E32-T24SR 2M
4,000
*
2,960
2,200
1,460
580
E32-T24S 2M
4,000
*
3,500
2,600
1,740
700