Intel® Xeon® Processor E5-1600/E5-2600/E5-4600 Product Families
177
Datasheet Volume One
Notes:
1.
Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2.
The voltage rail V
CCD
which will be set to 1.50 V or 1.35 V nominal depending on the voltage of all DIMMs connected to the
processor.
3.
V
IL
is the maximum voltage level at a receiving agent that will be interpreted as a logical low value.
4.
V
IH
is the minimum voltage level at a receiving agent that will be interpreted as a logical high value.
5.
V
IH
and V
OH
may experience excursions above V
CCD
. However, input signal drivers must comply with the signal quality
specifications. Refer to
Section 7.9
.
6.
This is the pull down driver resistance. Refer to processor signal integrity models for I/V characteristics. Reset drive does not
have a termination.
7.
R
VTT_TERM
is the termination on the DIMM and not controlled by the processor. Please refer to the applicable DIMM datasheet.
8.
The minimum and maximum values for these signals are programmable by BIOS to one of the pairs.
9.
COMP resistance must be provided on the system board with 1% resistors. See the
applicable platform design guide for
implementation details. DDR01_RCOMP[2:0] and DDR23_RCOMP[2:0] resistors are terminated to VSS.
10. Input leakage current is specified for all DDR3 signals.
11. DRAM_PWR_OK_C{01/23} must have a maximum of 30 ns rise or fall time over VCCD * 0.55 +300 mV and -200 mV and the
edge must be monotonic.
12. The DDR01/23_RCOMP error tolerance is ± 15% from the compensated value.
V
OL
Output Low Voltage
(V
CCD
/ 2)* (R
ON
/(R
ON
+R
VTT_TERM
))
V
2, 7
V
OH
Output High Voltage
V
CCD
- ((V
CCD
/ 2)* (R
ON
/
(R
ON
+R
VTT_TERM
))
V
2, 5, 7
Reference Clock Signal
R
ON
DDR3 Clock Buffer On
Resistance
21
31
Ω
6
Command Signals
R
ON
DDR3 Command Buffer On
Resistance
16
24
Ω
6
R
ON
DDR3 Reset Buffer On
Resistance
25
75
Ω
6
V
OL_CMOS1.5v
Output Low Voltage, Signals
DDR_RESET_ C{01/23}_N
0.2*V
CCD
V
1,2
V
OH_CMOS1.5v
Output High Voltage, Signals
DDR_RESET_ C{01/23}_N
0.9*V
CCD
V
1,2
I
IL_CMOS1.5v
Input Leakage Current
-100
+100
μ
A
1,2
Control Signals
R
ON
DDR3 Control Buffer On
Resistance
21
31
Ω
6
DDR01_RCOMP[0
]
COMP Resistance
128.7
130
131.3
Ω
9,12
DDR01_RCOMP[1
]
COMP Resistance
25.839
26.1
26.361
Ω
9,12
DDR01_RCOMP[2
]
COMP Resistance
198
200
202
Ω
9,12
DDR23_RCOMP[0
]
COMP Resistance
128.7
130
131.3
Ω
9,12
DDR23_RCOMP[1
]
COMP Resistance
25.839
26.1
26.361
Ω
9,12
DDR23_RCOMP[2
]
COMP Resistance
198
200
202
Ω
9,12
DDR3 Miscellaneous Signals
V
IL
Input Low Voltage
DRAM_PWR_OK_C{01/23}
0.55*VCC
D - 0.2
V
2, 3,
11, 13
V
IH
Input High Voltage
DRAM_PWR_OK_C{01/23}
0.55*VCC
D + 0.3
V
2, 4, 5,
11, 13
Table 7-16. DDR3 and DDR3L Signal DC Specifications (Sheet 2 of 2)
Symbol
Parameter
Min
Typ
Max
Units
Notes
1
