EE PRO for TI-89, 92 Plus
Equations - Solid State Devices
79
LLn
Diffusion length, n
m
lNN
n-channel length
m
Lp
Diffusion length, p
m
lP
p-channel length
m
µ
n
n (electron) mobility
m2/(V*s)
µ
p
p (positive charge) mobility
m2/(V*s)
mn
n effective mass
unitless
mp
p effective mass
unitless
N
Doping concentration
1/m3
Na
Acceptor density
1/m3
nnC
n density, collector
1/m3
Nd
Donor density
1/m3
nE
n density, emitter
1/m3
ni
Intrinsic density
1/m3
N0
Surface concentration
1/m3
npo
n density in p material
1/m3
p
p density
1/m3
pB
p density, base
1/m3
φ
F
Fermi potential
V
φ
GC
Work function potential
V
pno
p density in n material
1/m3
Qtot
Total surface impurities
unitless
Qb
Bulk charge at bias
C/m2
Qb0
Bulk charge at 0 bias
C/m2
Qox
Oxide charge density
C/m2
Qsat
Base Q, transition edge
C
ρ
n
n resistivity
Ω
*m
ρ
p
p resistivity
Ω
*m
Rl
Load resistance
Ω
τ
B
lifetime in base
s
τ
D
Time constant
s
τ
L
Time constant
s
τ
o
Lifetime
s
τ
p
Minority carrier lifetime
s
τ
t
Base transit time
s
t
Time
s
TT
Temperature
K
tch
Charging time
s
tdis
Discharge time
s
tox
Gate oxide thickness
m
tr
Collector current rise time
s
ts
Charge storage time
s
tsd1
Storage delay, turn off
s
tsd2
Storage delay, turn off
s
Ttr
Transit time
s
V1
Input voltage
V
Va
Applied voltage
V
Vbi
Built-in voltage
V
VBE
BE bias voltage
V
VCB
CB bias voltage
V
VCC
Collector supply voltage
V