PKP
VS1000 P
ROGRAMMER
’
S
G
UIDE
VSMPG
17.3
Registers
Nand flash controller user registers can be divided to three groups: the nand flash in-
terface control registers, the dsp interface control registers and the ECC control/logging
registers. Register map is shown in the next table.
Byte-wide bus peripheral registers
Offset
Type
Register
Function
0
rw
CTRL[8:0]
Byte-wide Bus (Nand Flash) Controller Control
1
r
LPL[15:0]
Calculated Line Parity for 512-byte block
2
r
CP_LPH[7:0]
Calculated Column Parity for 512-byte block
3
rw
DATA[15:0]
Buffer Data read/write register
4
rw
NFIF[12:0]
Buffer-to-Physical Interface Control
5
rw
DSPIF[7:0]
Buffer-to-DSP Interface Control
6
r
ECC_CNT[7:0]
Error Correction Code counter
17.3.1
Control register
NFLSH_CTRL bits
Name
Bits
Description
lcd-ce-mode
8
Chip select operation mode in read/write cycles
int-enable
7
Interrupt enable
nf-sreset
6
Resets the controller
waitstates
5:0
Number of wait states in read/write cycles
Waitstates delays the read/write operation by (1+n)+(1+n) master clock cycles where n
is the number of wait states. I.e. The flash read/write enable low and high times are
both delayed.
17.3.2
Line and Column parity registers
NFLSH_LPL bits
Name
Bits
Description
lpl
15:0
Low part (bits 15:0) of Line Parity
NFLSH_CP_LPH bits
Name
Bits
Description
cp
7:2
Calculated Column Parity bits (6 bits)
lph
1:0
High part (bits 17:16) of Line Parity
Lp and cp calculate the parity bits as descibed in Samsung’s Application Note for NAND
Flash Memory (Revision 2.0). The parity calculation can be used with or without actually
accessing any physical Nand Flash device. A nand operation can be active during ECC
calculation but it must be from/to the data buffer.
When ECC is enabled (ecc-ena=1), each read and write to the dreg register updates
Rev. 0.20
2011-10-04
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