Control Board
Principles of Operation
LigaSure Vessel Sealing Generator Service Manual
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Main Microcontroller Memory
An ST Microelectronics PSD835G2 programmable systems device (U3) provides
program memory (512K x 8 external Flash Memory) and data memory (2K x 8
external battery-backed static RAM) for the main microcontroller. Additional data
memory is available from these sources:
•
256 x 8 microcontroller internal RAM
•
4K x 8 external static RAM (U4) shared with the feedback microcontroller
Battery-Backed RAM
A socket on the control board contains a 3.0 V lithium button cell battery (BT1).
This battery provides backup power for the 2K x 8 external RAM on the
PSD835G2 device (U3) used by the main microcontroller. The battery-backed
RAM stores calibration constants, last setup parameters, and temporary data.
Feedback Microcontroller
The feedback microcontroller (U11), like the main microcontroller, is an 80C562.
It receives commands from the main microcontroller and, when the generator is
activated, establishes the appropriate relay closures and activates RF output. It
continually adjusts the output signal of the generator by controlling the high
voltage DC power supply and the RF clock circuitry. It is primarily responsible
for these functions:
•
T_ON waveform control
•
Constant voltage, current, and power feedback control
•
ECON initialization
•
Real-time information update (actual voltage, current, power, impedance,
effect mode)
•
Memory tests
•
Communicating with the main microcontroller
Feedback Microcontroller Memory
An ST Microelectronics PSD835G2 programmable systems device (U3) provides
program memory (512K x 8 external Flash Memory) and data memory (2K x 8
external static RAM) for the feedback microcontroller. Additional data memory is
available from these sources:
•
256K x 8 microcontroller internal RAM
•
4K x 8 external static RAM (U4) shared with the main microcontroller
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