THine CEL SerDes THCV235-Q, Руководство пользователя

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THCV235-Q_THCV236-Q_Rev.3.40_E
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2016 THine Electronics, Inc.
THine Electronics, Inc.
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Absolute Maximum Ratings
Table 46. Absolute Maximum Ratings
Parameter Min Typ Max Unit
Supply Voltage(VDD,AVDD) -0.3 - 4.0 V
LVCMOS Input Voltage -0.3 - VDD+0.3 V
LVCMOS Output Voltage -0.3 - VDD+0.3 V
LVCMOS Bi-directional buffer Input Voltage -0.3 - VDD+0.3 V
LVCMOS Bi-directional buffer Output Voltage -0.3 - VDD+0.3 V
Open-Drain Output Voltage -0.3 - 4.0 V
CML Receiver Input Voltage -0.3 - 0.3 V
CML Transmitter Output Voltage -0.3 - 0.3 V
CML Bi-directional buffer Input Voltage -0.3 - VDD+0.3 V
CML Bi-directional buffer Output Voltage -0.3 - VDD+0.3 V
Output Current -50 - 50 mA
Storage temperature -55 - 125 °C
Junction temperature - - 125 °C
Reflow Peak Temperature/Time - - 260/10 °C/sec
Maximum Power Dissipation @+25°C - - 2.5 W
Recommended Operating Conditions
Table 47. Recommended Operating Condition
Parameter Min Typ Max Unit
Supply Voltage(VDD,AVDD) 1.7 - 3.6 V
Operating Temperature -40 - 105 °C
Electrical Specification
LVCMOS DC Specification
Table 48. LVCMOS DC Specification
Symbol Parameter Pin Type Condition Min Typ Max Unit
VIH High Level Input Voltage
I
VDD=1.7-2.0V 0.65×VDD - VDD V
VDD=2.0-3.0V 0.70×VDD - VDD V
VDD=3.0-3.6V 2.0 - VDD V
IL,B VDD=1.7-3.6V 0.70×VDD - VDD V
VIL Low Level Input Voltage
I
VDD=1.7-2.0V 0 - 0.35×VDD V
VDD=2.0-3.0V 0 - 0.30×VDD V
VDD=3.0-3.6V 0 - 0.8 V
IL,B VDD=1.7-3.6V 0 - 0.30×VDD V
VOH High Level Output Voltage O,B
VDD=1.7-3.6V
IOH=-4mA
VDD-0.45 - VDD V
VOL Low Level Output Voltage
O,B
VDD=1.7-3.6V
IOL=4mA
0 - 0.45 V
BO
VDD=1.7-3.6V
IOL=2mA
0 - 0.2 V
IIH Input Leak Current High I,IL VIN=VDD - - 10 uA
IIL Input Leak Current Low I,IL VIN=0V -10 - - uA
IOZH
Output Leak Current High in
Hi-Z State
O,B,BO VIN=VDD - - 10 uA
IOZL
Output Leak Current Low in
Hi-Z State
O,B,BO VIN=0V -10 - 10 uA