Section 4: Off-state MOSFET characterization of a power MOSFET Model 8010 High Power Device Test Fixture User's Manual
4-14
8010-900-01 Rev. C / March 2017
Example usage
The functions in this script allow updates to the test parameters without rewriting or re-running the
script. To run the test, call the
Idss()
function, passing in the appropriate values for test parameters.
Idss() parameters
Parameter
Units
Description
gateV
volts
Gate voltage to apply with Series 2600 System SourceMeter
Instrument
startV
volts
Start voltage for the drain voltage sweep
stopV
volts
Final voltage for the drain voltage sweep
numSteps
not applicable
Number of voltage steps to perform in the voltage sweep
measDelay
seconds
Measurement delay after applying drain voltage and before
measuring drain leakage current
measRange
amps
Fixed current measurement range used to measure drain
leakage current
iLimit
amps
Current limit (compliance) for the Model 2657 connected to
the MOSFET drain terminal
numNPLC
not applicable
Integration time, specified as the number of power line cycles
An example of how to call this function is shown here:
Idss(0, 10, 1760, 500, 0.05, 100e-9, 500e-6, 1)
This call applies 0 V to the MOSFET gate terminal and programs the Model 2657 to generate a 500
point voltage sweep from 10 V to 1760 V at the drain terminal. After each voltage step, a 50 ms delay
occurs before the current is measured. The measurement is made at 1 PLC. The measurements are
stored in the instrument's reading buffers and are output from the communication interface
immediately after the test is run.
Example output data is shown in the following graphic.