In this section:
Introduction ............................................................................... 4-1
Equipment needed for this example ......................................... 4-2
Device connections .................................................................. 4-2
Install the device and make connections .................................. 4-6
Set up communication .............................................................. 4-7
BVdss measurement ................................................................ 4-8
Idss measurement .................................................................. 4-11
Introduction
This example characterizes the drain-to-source off-state performance of a power MOSFET in a
TO-247 package in the high-voltage side of the Model 8010.
It demonstrates how to program the Models 2657 and Series 2600 to perform BV
dss
and I
dss
measurements. For a BV
dss
measurement, a test current is applied to the drain of the device while it is
in the off state and a voltage is measured that corresponds to the drain-to-source breakdown voltage.
For I
dss
measurements, a drain voltage (V
ds
) versus drain current (I
d
) curve is generated while
applying a gate voltage (V
gs
) that ensures that the device is in the off state. The Model 2657 is used
to supply the drain voltage and make measurements of drain voltage and drain current. The Series
2600 is used to provide the gate voltage.
You can also use this example to test an IGBT in a TO-247 package. You will need to make two
substitutions:
Substitute the collector terminal of the IGBT for the drain terminal of the FET
Substitute the emitter terminal of the IGBT for the source terminal of the FET
Section 4
Off-state MOSFET characterization of a power MOSFET