Chapter 6 Specifications
6-2
6
6-1
Sensor Head Specifications
●
Diffuse reflection Type
Standard
Type
HL-G103-A-
C5
HL-G105-A-
C5
HL-G108-A-
C5
HL-G112-A-
C5
HL-G125-A-
C5
Model No.
High-func
tion Type
HL-G103-S-J HL-G105-S-J HL-G108-S-J HL-G112-S-J HL-G125-S-J
Supply voltage
24 VDC ±10% including ripple 0.5 V (P-P)
Current consumption
100 mA max.
Measurement method
Diffuse reflection
Measurement center
distance
30 mm
50 mm
85 mm
120 mm
250 mm
Measurement range
±4 mm
±10 mm
±20 mm
±60 mm
±150 mm
Beam source
Red semiconductor laser Class 2 (JIS/IEC/GB/FDA laser notice No. 50)
Max output: 1 mW, Emission peak wavelength: 655 nm
Beam diameter (
*1
)
0.1×0.1 mm
0.5×1 mm
0.75×1.25 mm 1.0×1.5 mm
1.75×3.5 mm
Beam receiving
element
CMOS image sensor
Resolution
0.5
μ
m 1.5
μ
m 2.5
μ
m 8
μ
m 20
μ
m
Linearity
±0.1% F.S.
±0.3% F.S.
Temperature
characteristics
±0.08% F.S./°C
Sampling cycle
200
μ
s, 500
μ
s, 1 ms, 2 ms
Voltage
Output range: 0 to 10.5 V (normal), 11 V (at alarm)
Output impedance: 100
Analog
out
pu
t
Current
Output range: 3.2 to 20.8 mA (normal), 21.6 mA (at alarm)
Load impedance: 300
max.
Judgment output or alarm output (switchable)
NPN open-collector transistor/PNP open-collector transistor (switchable)
OUT1
OUT2
OUT3
<Settings for NPN>
Peak in-flow current: 50 mA
Applied voltage: 3 to 24 VDC (between
output and 0 V)
Residual voltage: 2 V max. (at in-flow
current of 50 mA)
Leak current
:
0.1mA or less
<Settings for PNP>
Peak out-flow current: 50 mA
Residual voltage: 2.8 V max. (at
in-flow current of 50 mA)
Leak current
:
0.1mA or less
Output
operation
Open when the output is ON.
Short-circuit
protection
Incorporated (Auto-reset)
NP switching input
At 0 V: NPN open-collector output
At supply voltage of 24 VDC: PNP open-collector output
Содержание HL-G1 A-C5 Series
Страница 18: ...Introduction 16 ...
Страница 147: ...Chapter 6 Specifications 6 17 6 250 mm Type HL G125 A C5 HL G125 S J Unit mm 37 1 12 5 118 3 400 100 35 39 5 5 ...
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