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AN-6094 
 

© 2012 Fairchild Semiconductor Corporation 

 

www.fairchildsemi.com 

Rev. 1.0.0  •  9/27/12 

14 

(Design Example)

 In STEP-8, the post LC filter is 

designed with two 330 µF capacitors and a 1.8 µH 
inductor. Since the resonance frequency of the post LC 
filter is 9.2 kHz, the bandwidth of the feedback loop 
should be less than 1/3 of the cut-off frequency to 
minimize the phase drop caused by the post LC filter. 
Thus, the target bandwidth of the feedback loop is 
determined as around 3 kHz. 

 

To simplify analysis, the inductor of the post filter is 
ignored, since the bandwidth is below the cutoff 
frequency of post LC filter. The effective output 
capacitance and its effective series resistance are given as:

 

330

2 660

OUT

C

F

F

μ

μ

=

× =

 

100

/ 2 50

ES

R

m

m

=

Ω =

Ω

 

The slope of current sensing signal for high line is 
obtained as: 

373 1.2

0.845 /

530

DL

CS

m

V

R

V

m

V

s

L

H

μ

μ

=

=

=

  

The slope of internal slope compensation is obtained as: 

max

0.3

0.3

0.066 /

1/

7.14

0.64

a

S

V

V

m

V

s

f

D

s

μ

μ

=

=

=

×

×

 

Then, the gain G

V

 for high line and maximum load 

condition is obtained as: 

1

3

3

N

O

V

PK

a

CS DS

V

m

G

m m

R I

= ⋅

=

+

 

The system pole and zero are obtained as: 

2

727

/

p

L

OUT

rad s

R C

ω

=

=

 

1

30,300

/

Z

ES

OUT

rad s

R C

ω

=

=

 

With R

F

=0 

, C

FR

=10 nF,  R

bias

=1 k

, R

F1

=50 k

C

FB

=4nF (including output capacitance of opto-

transistor), and R

FB

=42 k

; 3 kHz bandwidth with 53

° 

phase margin is obtained. For C

FB

, output capacitance of 

an opto-transistor is assumed to be 3 nF and a 1 nF 
external capacitor is used. 

[STEP-11] Choose Startup Resistor for HV Pin 

Figure 22 shows the high-voltage (HV) startup circuit for 
FAN302 applications. Internally, the JFET is used to 
implement the high-voltage current source, whose 
characteristics are shown in Figure 23. Technically, the 
HV pin can be directly connected to the DC link (V

DL

). 

However, to improve reliability and surge immunity, it is 
typical to use a ~100 k

 resistor between the HV pin and 

the DC link. The actual HV current with a given DC link 
voltage and startup resistor is determined by the 
intersection point of V-I characteristics line and load line, 
as shown in Figure 23. 
During startup, the internal startup circuit is enabled and 
the DC link supplies the current, I

HV

, to charge the hold-

up capacitor, C

DD

, through R

HV

. When the V

DD 

voltage 

reaches V

DD-ON

, the internal HV startup circuit is disabled 

and the IC starts PWM switching. Once the HV startup 
circuit is disabled, the energy stored in C

DD

 should supply 

the IC operating current until the transformer auxiliary 
winding voltage reaches the nominal value. Therefore, 
C

DD

 should be properly designed to prevent V

DD

 from 

dropping to V

DD-OFF 

before the auxiliary winding builds up 

enough voltage to supply V

DD

.  

The startup time with a given C

DD

 capacitor is given as: 

.

(

)

DD

DD ON

start

HV

DD ST

C V

t

I

I

=

(53) 

 

Figure 22. HV Startup Circuit 

500V

100V

200V

300V

400V

3.5mA

I

HV

0.8mA

1.5mA

DL

HV

HV

HV

V

V

I

R

=

DL

HV

V

R

DL

V

V

HV

 

Figure 23. V-I Characteristics of HV Pin 

(Design Example)

 With 100 k

 HV resistor and 33 µF 

V

DD

 capacitor, the maximum startup time is: 

 

.

33 16

1.32s

(

)

0.8

0.4

DD

DD ON

start

HV

DD ST

C V

V

t

I

I

mA

mA

μ

=

=

=

 

Содержание Fairchild FAN302HL

Страница 1: ...y ON Semiconductor Typical parameters which may be provided in ON Semiconductor data sheets and or specifications can and do vary in different applications and actual performance may vary over time Al...

Страница 2: ...nsformer and controlled with an internal compensation circuit This removes the output current sensing loss and eliminates all external current control circuitry facilitating a higher efficiency power...

Страница 3: ...ycle As seen in Figure 2 the outputs of two comparators PWM I and PWM V are combined with the OR gate and used as a reset signal of flip flop to determine the MOSFET turn off instant The lower signal...

Страница 4: ...on range since the output current can be properly estimated only in DCM as described in Section 2 As seen in Figure 5 the MOSFET conduction time tON decreases as output voltage decreases in CC Mode wh...

Страница 5: ...FF C The overall power conversion efficiency should be estimated to calculate the input power and maximum DC link voltage ripple If no reference data is available use the typical efficiencies in Table...

Страница 6: ...nt B are given as N O B O IN B FF B V I P E 9 N O B O IN T B FF S B V I P E 10 The overall efficiency at operating point C can be approximated as N O C O F FF C FF N O C F O V V V E E V V V 11 where V...

Страница 7: ...he MOSFET drain to source voltage waveforms When the MOSFET is turned off the sum of the input DC link voltage VDL and the output voltage reflected to the primary side is imposed across the MOSFET cal...

Страница 8: ...the power consumption of the IC by minimizing VDD at no load condition NA NS is determined as 1 6 STEP 4 Design the Transformer Figure 12 shows the MOSFET conduction time tON diode current discharge...

Страница 9: ...point C is given as min 1 1 DL C S OFF C ON C S C P O C F V N t t f N V V 28 The non conduction time should be larger than 15 of switching period considering the transformer variation and frequency ho...

Страница 10: ...as 2 P CCR CS N S O N V R N I K 31 where VCCR is 2 43 V and K 12 and 10 5 V for UL and HL respectively The voltage divider RVS1 and RVS2 should be determined so that VS is about 2 5 V at 85 of diode c...

Страница 11: ...s related to the power dissipation in the clamping circuit Setting the voltage overshoot too low can lead to severe power dissipation in the clamping circuit For reasonable clamping circuit design vol...

Страница 12: ...network is less than the designed value due to this effect 2 m OSS L C 2 LK OSS L C Figure 18 Drain Voltage Waveform Design Example Assuming that 700 V MOSFET is used the voltage overshoot to limit th...

Страница 13: ...g frequency Design Example Assuming a 330 F tantalum capacitor with 100 m ESR for the output capacitor the voltage ripple on the output is 5 59 PK P C DS S N I I A N 2 0 592 2 N DIS A C O O C C O C t...

Страница 14: ...L 51 Note that the effect of slope compensation is weaker at high line which increases the gain of control to output transfer function Thus the high line is the worst case for feedback loop design Si...

Страница 15: ...or is used STEP 11 Choose Startup Resistor for HV Pin Figure 22 shows the high voltage HV startup circuit for FAN302 applications Internally the JFET is used to implement the high voltage current sour...

Страница 16: ...ror amplifier output in normal operation During the load transient or abnormal condition such as output short the error amplifier can be saturated HIGH and the drain current is regulated by the pulse...

Страница 17: ...ge traces related to the drain of the MOSFET and the RCD snubber should be away from control circuits to prevent unnecessary interference If a heat sink is used for the MOSFET connect this heat sink t...

Страница 18: ...elds 18 H of effective leakage inductance Clamping circuit resistor R10 is adjusted to 390 k based on test results from the actual power supply Note that the sensing resistor is fine tuned to 1 2 base...

Страница 19: ...Start Pin End Pin Turns W1 1 2 2UEW 0 15 2 8 2 W2 4 5 2UEW 0 12 1 22 0 22 1 22 3 W3 Fly Fly TEX E 0 4 1 5 3 Pin Specifications Remark Primary Side Inductance 4 5 530 H 7 100 kHz 1 V Primary Side Effec...

Страница 20: ...2 shows the loss breakdown for the standby power consumption for 90 VAC and 264 VAC Figure 31 shows the measured output voltage and output current curve The output current is regulated between 1 A and...

Страница 21: ...R USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE...

Страница 22: ...the rights of others ON Semiconductor products are not designed intended or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices wit...

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