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AN-6094 
 

© 2012 Fairchild Semiconductor Corporation 

 

www.fairchildsemi.com 

Rev. 1.0.0  •  9/27/12 

added in to Equation (23), considering the V

DD

 ripple 

caused by Burst Mode operation at no-load condition. 

S

DL

O

P

N

V

V

N

+

(

)

P

O

F

S

N

V

V

N

+

DL

V

 

Figure 10. Voltage Stress on MOSFET and Diode 

 

 

Figure 11. V

DD

 and Winding Voltage 

(Design Example)

  

For a 700 V MOSFET to have 35% margin on V

DS

nom

the reflected output voltage should be:  

373

0.65 700 455

82

nom

DS

RO

RO

V

V

V

V

V

=

+

<

×

=

<

 

Setting V

RO

=71 V, N

P

 / N

S

 is obtained as: 

71

13.27

(

)

5.35

RO

P

S

o

F

V

N

N

V

V

=

=

=

+

 

Then, the voltage stress of diode is obtained as: 

max

33.13

nom

S

D

DL

O

P

N

V

V

V

V

N

=

+

=

 

 

The allowable minimum V

DD

 is 5.3 V, considering the 

tolerances of UVLO. Considering voltage ripple on V

DD

 

caused by burst operation at no-load condition, a 2 V 
margin is added for V

DD

 voltage calculation at no-load 

condition, calculated as:

 

min

max

(

)

(5 0.35) 0.7 5.3 2

A

DD

O

F

FA

UVLO

MRGN

S

A

S

N

V

V

V

V

V

V

N

N

N

=

+

>

+

+

>

+

 

1.5

A

S

N

N

>

 

To minimize the power consumption of the IC by 
minimizing V

DD

 at no-load condition, N

A

 / N

S

 is 

determined as 1.6. 

 

[STEP-4] Design the Transformer 

Figure 12 shows the MOSFET conduction time (t

ON

), 

diode current discharge time (t

DIS

), and diode non-

conduction time (t

OFF

). For the transformer design, first 

determine how much non-conduction time (t

OFF

) is used in 

DCM operation. The diode current discharge time 
increases as the output voltage drops in CC Mode. Even 
though t

ON

 decreases as output voltage drops, t

ON

 is 

proportional to the square root of the output voltage, while 
t

DIS

 is inversely proportional to the output voltage. Thus, 

the sum of t

ON

 and t

DIS

 tends to increase, which reduces 

the t

OFF

, forcing the flyback converter with a fixed 

switching frequency into CCM operation as the output 
voltage drops.  

Thus, operating point B, where the frequency reduction 
starts, is the worst case for determining the non-
conduction time (t

OFF

), as illustrated in Figure 12. t

OFF

 

should be large enough to cover the transformer variation 
and frequency hopping. However, too large t

OFF

 increases 

RMS current of the primary side current. It is typical to 
set t

OFF

 as 15-20% of the switching period. 

 

 

Содержание Fairchild FAN302HL

Страница 1: ...y ON Semiconductor Typical parameters which may be provided in ON Semiconductor data sheets and or specifications can and do vary in different applications and actual performance may vary over time Al...

Страница 2: ...nsformer and controlled with an internal compensation circuit This removes the output current sensing loss and eliminates all external current control circuitry facilitating a higher efficiency power...

Страница 3: ...ycle As seen in Figure 2 the outputs of two comparators PWM I and PWM V are combined with the OR gate and used as a reset signal of flip flop to determine the MOSFET turn off instant The lower signal...

Страница 4: ...on range since the output current can be properly estimated only in DCM as described in Section 2 As seen in Figure 5 the MOSFET conduction time tON decreases as output voltage decreases in CC Mode wh...

Страница 5: ...FF C The overall power conversion efficiency should be estimated to calculate the input power and maximum DC link voltage ripple If no reference data is available use the typical efficiencies in Table...

Страница 6: ...nt B are given as N O B O IN B FF B V I P E 9 N O B O IN T B FF S B V I P E 10 The overall efficiency at operating point C can be approximated as N O C O F FF C FF N O C F O V V V E E V V V 11 where V...

Страница 7: ...he MOSFET drain to source voltage waveforms When the MOSFET is turned off the sum of the input DC link voltage VDL and the output voltage reflected to the primary side is imposed across the MOSFET cal...

Страница 8: ...the power consumption of the IC by minimizing VDD at no load condition NA NS is determined as 1 6 STEP 4 Design the Transformer Figure 12 shows the MOSFET conduction time tON diode current discharge...

Страница 9: ...point C is given as min 1 1 DL C S OFF C ON C S C P O C F V N t t f N V V 28 The non conduction time should be larger than 15 of switching period considering the transformer variation and frequency ho...

Страница 10: ...as 2 P CCR CS N S O N V R N I K 31 where VCCR is 2 43 V and K 12 and 10 5 V for UL and HL respectively The voltage divider RVS1 and RVS2 should be determined so that VS is about 2 5 V at 85 of diode c...

Страница 11: ...s related to the power dissipation in the clamping circuit Setting the voltage overshoot too low can lead to severe power dissipation in the clamping circuit For reasonable clamping circuit design vol...

Страница 12: ...network is less than the designed value due to this effect 2 m OSS L C 2 LK OSS L C Figure 18 Drain Voltage Waveform Design Example Assuming that 700 V MOSFET is used the voltage overshoot to limit th...

Страница 13: ...g frequency Design Example Assuming a 330 F tantalum capacitor with 100 m ESR for the output capacitor the voltage ripple on the output is 5 59 PK P C DS S N I I A N 2 0 592 2 N DIS A C O O C C O C t...

Страница 14: ...L 51 Note that the effect of slope compensation is weaker at high line which increases the gain of control to output transfer function Thus the high line is the worst case for feedback loop design Si...

Страница 15: ...or is used STEP 11 Choose Startup Resistor for HV Pin Figure 22 shows the high voltage HV startup circuit for FAN302 applications Internally the JFET is used to implement the high voltage current sour...

Страница 16: ...ror amplifier output in normal operation During the load transient or abnormal condition such as output short the error amplifier can be saturated HIGH and the drain current is regulated by the pulse...

Страница 17: ...ge traces related to the drain of the MOSFET and the RCD snubber should be away from control circuits to prevent unnecessary interference If a heat sink is used for the MOSFET connect this heat sink t...

Страница 18: ...elds 18 H of effective leakage inductance Clamping circuit resistor R10 is adjusted to 390 k based on test results from the actual power supply Note that the sensing resistor is fine tuned to 1 2 base...

Страница 19: ...Start Pin End Pin Turns W1 1 2 2UEW 0 15 2 8 2 W2 4 5 2UEW 0 12 1 22 0 22 1 22 3 W3 Fly Fly TEX E 0 4 1 5 3 Pin Specifications Remark Primary Side Inductance 4 5 530 H 7 100 kHz 1 V Primary Side Effec...

Страница 20: ...2 shows the loss breakdown for the standby power consumption for 90 VAC and 264 VAC Figure 31 shows the measured output voltage and output current curve The output current is regulated between 1 A and...

Страница 21: ...R USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE...

Страница 22: ...the rights of others ON Semiconductor products are not designed intended or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices wit...

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