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AN-6094 
 

© 2012 Fairchild Semiconductor Corporation 

 

www.fairchildsemi.com 

Rev. 1.0.0  •  9/27/12 

(Design Example)

 By setting the non conduction time at 

operating point B as 1.6 µs, the MOSFET conduction 
time is obtained as: 

 

@

@

min

@

@

1/

2.15

(1

)

S

OFF

B

ON

B

DL

B

S

P

O

B

F

f

t

t

s

V

N

N

V

V

μ

=

=

+

+

 

The transformer primary-side inductance is calculated 
as: 

min

2

@

@

. @

(

)

527

2

DL

B

ON

B

m

S

IN T

B

V

t

L

f

H

P

μ

=

=

 

 

Assuming V

SH@A

 is 2.5 V, the switching frequency at the 

minimum output voltage is obtained as:

 

@

.

@

.

(2.15 2.5

)

45

O

C

F SH

S

S

C

S

N

SH

O

F SH

V

V

f

f

f

V

V

V

kHz

+

Δ

= −

Δ

+

=

 

The MOSFET conduction time at minimum output 
voltage is obtained as: 

. @

@

min

@

@

2

1

1.84

IN T

C

m

ON

C

DL

C

S

C

P

L

t

s

V

f

μ

=

=

 

The non-conduction time at minimum output voltage: 

min

@

@

@

@

@

1

(1

)

10.33

DL

C

S

OFF

C

ON

C

S

C

P

O

C

F

V

N

t

t

f

N

V

V

s

μ

=

+

+

=

 

The peak drain current at maximum load condition is 
given as: 

. @

2

423

IN T

A

PK

DS

m

S

P

I

mA

L

f

=

=

  

EE12.5 core is selected for the transformer. The 
minimum number of turns for the transformer primary 
side to avoid the core saturation is given by: 

min

6

6

527 10

0.423

63.5

0.3 12.88 10

PK

m DS

P

sat

e

L I

N

B A

=

×

=

=

×

 

Determine the proper integer for 

N

such that the 

resulting 

N

p

 

is larger than 

N

p

min

 

; given as:

 

min

13.27

13.27 5 66

P

S

P

N

N

N

=

×

=

× =

>

 

The auxiliary winding turns, N

A

, is obtained as: 

1.6 5 8

A

A

S

S

N

N

N

N

=

×

=

× =

 

[STEP-5] Set the Output Current and V

S

 

Sensing Resistor 

The nominal output current is determined by the sensing 
resistor value and transformer turns ratio as: 

2

P

CCR

CS

N

S O

N

V

R

N I

K

×

=

×

(31) 

where V

CCR

 is 2.43 V and K=12 and 10.5 V for UL and 

HL, respectively. 

The voltage divider R

VS1

 and R

VS2

 should be determined 

so that V

S

 is about 2.5 V at 85% of diode current 

conduction time as: 

1

.

2

@

(

)

1

N

VS

O

F SH

A

VS

S

SH

A

R

V

V

N

R

N

V

+

=

 

(32) 

The FAN302 indirectly senses input voltage using the VS 
pin current while the MOSFET is turned on, as illustrated 
in Figure 15. Since the VS pin voltage is clamped at 0.7 V 
when the MOSFET is turned on, the current flowing out 
of the VS pin is approximately proportional to the input 
voltage, calculated as: 

.

1

2

1

1

0.7

(

0.7)

A

A

DL

VS ON

DL

P

VS

VS

P

VS

N

N V

I

V

N

R

R

N R

=

+

+

(33) 

 

Figure 15. VS Pin Current Sensing 

FAN302 modulates the minimum on-time of the 
MOSFET such that it reduces as input voltage increases, 
as shown Figure 16. This allows smaller minimum on 
time for high-line condition, ensuring Burst Mode 
operation occurs at almost the same power level 
regardless of line voltage variation. The V

S

 current needs 

to be higher than 150 µA.

 

 

Increasing the minimum on-time by increasing R

VS1

 and 

R

VS2

 allows FAN302 to enter Burst Mode at a higher 

power level. This reduces the standby power consumption 
by increasing power delivered to the output per switching. 
However, this also increases the output voltage ripple by 
increasing the time interval between switching bundles in 
Burst Mode. Thus, the minimum on-time should be 
determined by a trade-off between standby power 
consumption and output voltage ripple. When selecting 
R

VS1

 and R

VS2

, 150 µA is the VS current level to consider 

seriously. If the VS current is lower than 150 µA, t

on_min

 

won’t be larger.  

 

 

Содержание Fairchild FAN302HL

Страница 1: ...y ON Semiconductor Typical parameters which may be provided in ON Semiconductor data sheets and or specifications can and do vary in different applications and actual performance may vary over time Al...

Страница 2: ...nsformer and controlled with an internal compensation circuit This removes the output current sensing loss and eliminates all external current control circuitry facilitating a higher efficiency power...

Страница 3: ...ycle As seen in Figure 2 the outputs of two comparators PWM I and PWM V are combined with the OR gate and used as a reset signal of flip flop to determine the MOSFET turn off instant The lower signal...

Страница 4: ...on range since the output current can be properly estimated only in DCM as described in Section 2 As seen in Figure 5 the MOSFET conduction time tON decreases as output voltage decreases in CC Mode wh...

Страница 5: ...FF C The overall power conversion efficiency should be estimated to calculate the input power and maximum DC link voltage ripple If no reference data is available use the typical efficiencies in Table...

Страница 6: ...nt B are given as N O B O IN B FF B V I P E 9 N O B O IN T B FF S B V I P E 10 The overall efficiency at operating point C can be approximated as N O C O F FF C FF N O C F O V V V E E V V V 11 where V...

Страница 7: ...he MOSFET drain to source voltage waveforms When the MOSFET is turned off the sum of the input DC link voltage VDL and the output voltage reflected to the primary side is imposed across the MOSFET cal...

Страница 8: ...the power consumption of the IC by minimizing VDD at no load condition NA NS is determined as 1 6 STEP 4 Design the Transformer Figure 12 shows the MOSFET conduction time tON diode current discharge...

Страница 9: ...point C is given as min 1 1 DL C S OFF C ON C S C P O C F V N t t f N V V 28 The non conduction time should be larger than 15 of switching period considering the transformer variation and frequency ho...

Страница 10: ...as 2 P CCR CS N S O N V R N I K 31 where VCCR is 2 43 V and K 12 and 10 5 V for UL and HL respectively The voltage divider RVS1 and RVS2 should be determined so that VS is about 2 5 V at 85 of diode c...

Страница 11: ...s related to the power dissipation in the clamping circuit Setting the voltage overshoot too low can lead to severe power dissipation in the clamping circuit For reasonable clamping circuit design vol...

Страница 12: ...network is less than the designed value due to this effect 2 m OSS L C 2 LK OSS L C Figure 18 Drain Voltage Waveform Design Example Assuming that 700 V MOSFET is used the voltage overshoot to limit th...

Страница 13: ...g frequency Design Example Assuming a 330 F tantalum capacitor with 100 m ESR for the output capacitor the voltage ripple on the output is 5 59 PK P C DS S N I I A N 2 0 592 2 N DIS A C O O C C O C t...

Страница 14: ...L 51 Note that the effect of slope compensation is weaker at high line which increases the gain of control to output transfer function Thus the high line is the worst case for feedback loop design Si...

Страница 15: ...or is used STEP 11 Choose Startup Resistor for HV Pin Figure 22 shows the high voltage HV startup circuit for FAN302 applications Internally the JFET is used to implement the high voltage current sour...

Страница 16: ...ror amplifier output in normal operation During the load transient or abnormal condition such as output short the error amplifier can be saturated HIGH and the drain current is regulated by the pulse...

Страница 17: ...ge traces related to the drain of the MOSFET and the RCD snubber should be away from control circuits to prevent unnecessary interference If a heat sink is used for the MOSFET connect this heat sink t...

Страница 18: ...elds 18 H of effective leakage inductance Clamping circuit resistor R10 is adjusted to 390 k based on test results from the actual power supply Note that the sensing resistor is fine tuned to 1 2 base...

Страница 19: ...Start Pin End Pin Turns W1 1 2 2UEW 0 15 2 8 2 W2 4 5 2UEW 0 12 1 22 0 22 1 22 3 W3 Fly Fly TEX E 0 4 1 5 3 Pin Specifications Remark Primary Side Inductance 4 5 530 H 7 100 kHz 1 V Primary Side Effec...

Страница 20: ...2 shows the loss breakdown for the standby power consumption for 90 VAC and 264 VAC Figure 31 shows the measured output voltage and output current curve The output current is regulated between 1 A and...

Страница 21: ...R USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE...

Страница 22: ...the rights of others ON Semiconductor products are not designed intended or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices wit...

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