NXP Semiconductors RDGD31603PSMKEVM, Руководство пользователя, Страница: 13 / 39

NXP Semiconductors
UM11697
RDGD31603PSMKEVM three-phase inverter kit
Name Function
VEEHW High-side phase W VEE voltage test point
Isolated negative voltage supply (-1.25 V to -7.5 V)
GNDHW High-side phase V isolated ground
VCCLU Low-side phase U VCC voltage test point Isolated positive voltage supply (11 V to 28 V)
VEELU Low-side phase U VEE voltage test point
Isolated negative voltage supply (-1.25 V to -7.5 V)
GNDLU Low-side phase U isolated ground
VCCLV Low-side phase V VCC voltage test point Isolated positive voltage supply (11 V to 28 V)
VEELV Low-side phase V VEE voltage test point
Isolated negative voltage supply (-1.25 V to -7.5 V)
GNDLV Low-side phase V isolated ground
VCCLW Low-side phase W VCC voltage test point Isolated positive voltage supply (11 V to 28 V)
VEELW Low-side phase W VEE voltage test point
Isolated negative voltage supply (-1.25 V to -7.5 V)
GNDLW Low-side phase W isolated ground
VPWR/VSUP +12 V DC VPWR low voltage positive supply connection (+12 V DC)
GND VPWR/VSUP low voltage supply ground connection
4.2.7 Gate drive resistors
•
RGH-gate high resistor in series with the GH pin at the output of the GD3160 driver and
SiC MOSFET gate that controls the turn on current for SiC gate.
• RGL-gate low resistor in series with the GL pin at the output of the GD3160 driver and
SiC MOSFET gate that controls the turn off current for SiC gate.
• RAMC-series resistor between SiC MOSFET gate and AMC input pin of the GD3160
high-side/low-side driver for gate sensing and Active Miller clamping.
UM11697 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2021. All rights reserved.
User manual Rev. 1 — 10 December 2021
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