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SECURITY 

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NXP Semiconductors 

JN-RM-2080 

 

K32W module development reference manual 

JN-RM-2080 

All information provided in this document is subject to legal disclaimers. 

© NXP Semiconductors N.V. 2020. All rights reserved. 

Reference manual 

Rev. 1.0 

— 27 Mar 2020 

14 of 30 

Contact information 

For more information, please visit: 

http://www.nxp.com

  

4.9  Reference Oscillator 

The NXP K32W061/041 device contains the necessary on-chip components to build a 
32-MHz reference oscillator with the addition of an external crystal resonator. There is no 
need to use external capacitors because the K32W061/041 includes a bank of 
switchable capacitors that can be tuned to adjust the load capacitance (C

L

) that needs to 

be seen by the XTAL.  

The reference crystal serves many purposes, including the provision of a reference for 
the 32-bit ARM processor, PHY controller, radio synthesizer and analogue peripherals. In 
addition, the crystal provides timing references for external I/O (e.g. on-chip UARTs) and 
timer counters. Thus, it is important that the crystal reference is specified and built 
correctly to ensure that the system functions properly. 

The choice of crystal resonator is important for the following reasons: 

Resonator tolerance:

 A number of parameters, ranging from on-chip timings to 

radio centre-frequency, are derived directly from the tolerance of the crystal. As 
indicated in the component list, we recommend that a total tolerance of less than 
±25 ppm is used, as the maximum permissible offset specified in BLE 5 
specification is ±50 ppm and ±40ppm in the IEE802.15.4 spec. Also, note that 
this tolerance should include both temperature and ageing effects imparted on 
the resonator. 

Resonator load capacitance:

 The active oscillator components on the 

K32W061/041 devices are designed for a crystal resonator with load 
capacitance (C

L

) of 6 pF. This is a standard load and resonators of this type are 

widely available. 

Lay-out recommendations: 

Route the connections from the 32 MHz XTAL to the chip oscillator pins with traces as 
short as possible. The layout of the oscillator circuit is such that tracks between 
components are as short as possible. This improves the performance of the oscillator by 
reducing stray capacitance which can introduce frequency errors. 

The XTAL should be placed away from high frequency devices and traces in order to 
reduce the capacitive coupling between XTAL pins and PCB traces. 

Keep other digital signal lines, especially clock lines and frequently switching signal lines, 
as far away from the crystal connections as possible.  

Caution

: Adherence to NXP’s recommendations will ensure that the module performs 

correctly. The substitution of components is not recommended, as this may lead to both 
oscillator start-up and frequency tolerance issues. 

 

4.10  Decoupling 

4.10.1  General considerations 

Decouple the power supplies or regulated voltages as close as possible to the supply pin 
of the IC. The decoupling capacitors must be connected to a localized ground pad on the 
top layer that is connected to the main ground plane layer through multiple vias. 

Ensure that each decoupling capacitor has its own via connection to ground. When 

Содержание K32W

Страница 1: ...RM 2080 K32W module development reference manual Rev 1 0 27 Mar 2020 Reference manual Document information Info Content Keywords K32W061 041 module Abstract Reference Manual for K32W061 041 modules a...

Страница 2: ...All information provided in this document is subject to legal disclaimers NXP Semiconductors N V 2020 All rights reserved Reference manual Rev 1 0 27 Mar 2020 2 of 30 Contact information For more info...

Страница 3: ...o 640 kB flash 152 kB SRAM and 128 kB ROM BLE Link layer processing hardware and peripherals optimized to meet the requirements of the target applications The design considerations presented in this m...

Страница 4: ...r each module variant Reference manual JN RM 2080 Schematics Layout Bill of Materials Full design databases including schematics and layout source files are available on request The following table pr...

Страница 5: ...ss hardware development the proper device footprint RF layout circuit matching antenna design and RF measurement capability are essential RF circuit design layout and antenna design are specialties re...

Страница 6: ...M13 DCDC external components 32 kHz XTAL 32 MHz XTAL RFIO MatchingNetwork IF Printed antenna Fl connector FEM SKY66403 Fig 4 K32W061 001 M16 The device footprint and layout are critical as the RF per...

Страница 7: ...he critical RF section which must be copied exactly for optimal radio performance The less critical layout area can be modified without reducing radio performance NOTE Exact dimensions are not given i...

Страница 8: ...r either a four layer or two layer board design is as follows 4 layer stack up Top RF routing of transmission lines L2 RF reference ground L3 DC power Bottom signal routing Two layer stack up Top RF r...

Страница 9: ...n boards in which the bare PCB s were all fabricated in the same lot However when the product goes into mass production there can be variations in PCB fabrication from lot to lot which can degrade per...

Страница 10: ...ectric constant of the board material trace width and the board thickness between the trace and the ground Additionally for CPW the transmission line is defined by the gap between the trace and the to...

Страница 11: ...way Typically these effects become worse as the frequency of operation is increased For most component suppliers this quality is expressed by the Self Resonant Frequency SRF specification For example...

Страница 12: ...designs It is certainly possible to substitute another vendor s parts but it may impact the performance of the circuit therefore it may be necessary to use different component values when parts from a...

Страница 13: ...ically for a 1 6mm thickness PCB material a single via can add 1 2nH of inductance and 0 5pF of capacitance depending upon the via dimensions and PCB dielectric material Provide multiple vias for high...

Страница 14: ...ible offset specified in BLE 5 specification is 50 ppm and 40ppm in the IEE802 15 4 spec Also note that this tolerance should include both temperature and ageing effects imparted on the resonator Reso...

Страница 15: ...ias The viasare too far fromthe decouplingcapacitors Fig 10 GND vias placement The capacitor with a smaller capacitance must be placed nearer to the IC The decoupling capacitor must be placed between...

Страница 16: ...n this document is subject to legal disclaimers NXP Semiconductors N V 2020 All rights reserved Reference manual Rev 1 0 27 Mar 2020 16 of 30 Contact information For more information please visit http...

Страница 17: ...as RF trace oscillator power lines and separate them from any signal that is likely to couple with them through parasitics Separation between 2 lines can be achieved by increasing the distance from on...

Страница 18: ...for all layers of the PCB and not just the top layer Any conductive objects close to the antenna could severely disrupt the antenna pattern resulting in deep nulls and high directivity in some directi...

Страница 19: ...1 mm for the smaller pads and a 6 4 mm square pad for the paddle Warning Solder resist area recommended Fig 17 Recommended PCB decal for HVQFN40 40 pin QFN The solder mask used is shown in Fig 19 The...

Страница 20: ...f 30 Contact information For more information please visit http www nxp com Fig 19 Solder paste mask for HVQFN40 40 pin QFN Fig 20 Vias on the paddle of the HVQFN40 40 pin QFN 25 vias are applied to t...

Страница 21: ...icle 10 8 of the Radio Equipment Directive 2014 53 EU a Frequency bands in which the equipment operates b The maximum RF power transmitted PN RF Technology a Freq Ranges EU b Max Transmitted Power K32...

Страница 22: ...g components that had not previously used for such applications 1 4 Have the non standard components been qualified so that they can be used in the application 1 5 Are recommendations for layout form...

Страница 23: ...TAL model has not been recommended by NXP have all the parameters been checked in order they fulfill NXP standard and application requirements load capacitance pulling sensitivity equivalent resistanc...

Страница 24: ...utput from the pin for sensitivity measurements 8 5 For printed and chip antenna Is the RF line implemented in such a way that the HW can be easily modified in order to do conducted measurements on on...

Страница 25: ...followed 1 4 Has the correct PCB material been specified 1 5 Have the correct PCB thicknesses been specified 2 RF IO 2 1 Is the RF_IO input output line well sized for 50 ohm The line width must be ca...

Страница 26: ...are used does one layer act as a continuous ground plane GND reference plane 5 2 Are numerous vias added near capacitor near fingers 5 3 Remove small GND areas and isolated fingers that cannot be con...

Страница 27: ...0 10 Abbreviations Table 4 Abbreviations Acronym Description EMC Electro Magnetic Compatibility ETSI European Telecommunications Standards Institute FCC Federal Communications Commission PAN Personal...

Страница 28: ...cal Layout of die flag area 7 Fig 6 PCB stack up 8 Fig 7 RF Matching Network 11 Fig 8 RF Plots for 3pF ceramic capacitor Murata GRM1555 type 12 Fig 9 GND path between C10 C12 and C19 13 Fig 10 GND via...

Страница 29: ...tion provided in this document is subject to legal disclaimers NXP Semiconductors N V 2020 All rights reserved Reference manual Rev 1 0 27 Mar 2020 29 of 30 13 List of tables Table 1 Modules reference...

Страница 30: ...4 3 Block diagram 5 4 Design considerations 5 4 1 K32W061 041 device footprint 7 4 2 PCB Stack Up 8 4 3 RF circuit topology and matching 9 4 4 Transmission lines 10 4 5 Components 11 4 6 GND planes 12...

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