SPECIFICATIONS AND TEST METHODS
No.
Item
Specification
Test Method
Temperature
Compensating Type
High Dielectric Type
18
High Temperature
Load
The measured and observed characteristics should satisfy the specifications
in the following table
Apply 200% of the rated voltage at the maximun operating
temperature
±
3
C for 1000
±
12 hours . Set for 24
±
2 hours at
room temperature, then measure.
The charge/discharge current is less than 50mA.
∙Initial measurement for high dielectric constant type.
Apply 200% of the rated DC voltage at the maximun operating
temperature
±
3
C for one hour. Remove and set for 24
±
2
hours at room temperature.Perform initial measurement.
Appearance No defects or abnormalities
Capacitance
Change
Within
±
3% or
±
0.3pF
(Whichever is larger)
R6,R7,C8,L8,R9:Within
±
12.5%
E4:Within
±
30%
F5:Within
±
30% (Cap
<
1.0
F)
F5:30/-40% (Cap
≧
1.0
F)
Q/D.F.
30pF and over :
Q
≧
350
10pF and over,
30pF and below:
Q
≧
275+ C
10pF and below:
Q
≧
200+10C
C:Nominal
Capacitance(pF)
[R6,R7,C8,L8]
W.V.:100V : 0.05max. (C < 0.068
F)
: 0.075max. (C
≧
0.068
F)
W.V.:25/50V :0.05max.
W.V.:16/10V :0.05max.
W.V.:6.3V/4V:0.075max. (C < 3.3
F)
:0.125max. (C
≧
3.3
F)
[R9]W.V.:50V: 0.075max.
[E4] W.V.:25Vmin.:0.05max.
[F5] W.V.:25Vmin.
:0.075max. (C
0.1
F) :0.125max.(C
≧
0.1
F)
W.V.:16/10V:0.15max. W.V.:6.3V:0.2max.
I.R.
More than 1,000M
or 50
F(Whichever is smaller)
Dielectric
Strength
No defects
Table A-1
Char.
Nominal Values
(ppm/
C
) Note 1
Capacitance Change from 25
C
-55
-30
-10
Max.
Min.
Max.
Min.
Max.
Min.
5C
0
±
30
0.58
-0.24
0.40
-0.17
0.25
-0.11
6C
0
±
60
0.87
-0.48
0.59
-0.33
0.38
-0.21
6P
-150
±
60
2.33
0.72
1.61
0.50
1.02
0.32
6R
-220
±
60
3.02
1.28
2.08
0.88
1.32
0.56
6S
-330
±
60
4.09
2.16
2.81
1.49
1.79
0.95
6T
-470
±
60
5.46
3.28
3.75
2.26
2.39
1.44
7U
-750
±
120
8.78
5.04
6.04
3.47
3.84
2.21
1X
+350
~
-1000
-
-
-
-
-
-
Note 1
Nominal values denote the temperature coefficient within a range of 25
C
to 125
C
(for
C)/85
C
(for other TC).
5
2
JEMCGS-0015Q
5
