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3. TECHNICAL BRIEF
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3.4. MEMORY(PF38F5060M0Y0BF, U101 )
The 512Mbit Ballaire Wireless Flash memory with LPSDRAM stacked device family offers multiple high-perfo
rmance solutions. The Ballaire flash die is manufactured on 65 nm ETOX™IX Process Technology. It delivers 1
08 MHz synchronous burst and page-mode read rates with supports multi-partitioning with Read-While-Wri
te (RWW) or Read-While-Erase (RWE) dual operations. The LPSDRAM is a high-performance volatile memory
operating at speeds up to 133 MHz with configurable burst lengths.
The Ballaire stacked device features programmable driver strength and low-power opera-tion. This Stacked
Chip Scale Package (SCSP) device is packaged in a standard Intel® x16D footprint and signal ballout.
This model uses 512Mbits Flash memory and 128Mbits LPSDRAM memory with stacked.
Figure. 3-4-1 MEMORY BLOCK DIAGRAM