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Sion Operating Manual
1.12 Converter Factory Settings
CAUTION
The Converter is preset in the factory. DO NOT change
the settings of Converter potentiometers P1, P2, P3 and
P4, otherwise you will invalidate the factory settings.
(See
Figure 1-33 .)
Figure 1-33 Converter Potentiometers P1, P2, P3, P4
1.13 Operation
Refer to the FabGuard operating manual section "Acquisition: Recipes and Runs".
1.13.1 Application Guide
Plasma processes are widely used in semiconductor manufacturing for depositing
conductive and insulating films, and for the subsequent etching of features in these
films to pattern integrated circuits. Radio frequency (RF) power is employed in most
plasma-based processes to disassociate reactant gases, providing the ions
needed for depositing and etching films. Monitoring the voltage and current of the
RF power can provide valuable process information for these critical plasma
processes.
1.13.1.1 Arc Detection
Plasma arcing in physical vapor deposition processes (PVD) can cause damage to
the target, the film being deposited and the wafer surface. Particles generated
during these arcs can reduce yields and significantly decrease profitability. The
Sion is an ultra fast, ultra small RF detector, ideal for measuring micro arcs in
chemical vapor deposition (CVD) and ETCH processes. The Sion collects voltage
and current data at speeds up to 20 KHz, detecting even the smallest of arcs in the
toughest of process conditions. Data collected in real time can then be used to
interrupt wafer processing on the tool and notify process and equipment engineers
of potential product and hardware damage.