EDO RAS# to CAS# Delay: The options are “2” and “3”. This
option controls the number of clocks for row miss leadoff timing
delay. The default setting is “3”.
EDO RAS# Precharge Time: The options are “4” or “3”. This
option sets the length of time in terms of number of clocks required
for the RAS# precharge. The default setting is “4”.
EDO DRAM Read Burst: The options are “x333” and “x222”. The
timing used depends on the type of DRAM on per-bank basis.
Slower rates may be required for slower memory. Normally set this
option to “x333” for 60ns DRAMs and set to “x222” for 50ns
DRAMs.
EDO DRAM Write Burst: The options are “x333” and “x222”.
The timing used depends on the type of DRAM on per-bank basis.
Slower rates may be required for slower memories. The default
setting is “x222”
SDRAM RAS-to-CAS Delay: The options are “Slow” and “Fast”.
This option controls the number of clocks for row miss leadoff
timing delay. The default setting is “Slow”.
SDRAM RAS Precharge Time: The options are “Slow” or “Fast”.
This option sets the length of time in terms of number of clocks
required for the RAS# precharge. The default setting is “Slow”.
SDRAM CAS Latency Time: The options are “2” and “3”. Slower
rate “3” may be required for slower SDRAMs or more than 2 banks
of SDRAM DIMMs are installed. The default setting is “3”.
DRAM Data Integrity Mode: The options are “ECC” and “Non-
ECC”. Set to “ECC” only when DIMM modules with parity bits are
used. This will enable the Error Checking and Correction function to
ensure the data integrity
System BIOS Cacheable: When set to “Enabled”, the System
BIOS will be cached for faster execution. The default setting is
“Enabled”.
Video BIOS Cacheable: When set to “Enabled”, the Video BIOS
will be cached for faster execution. The default setting is “Enabled”.
Chapter 3: BIOS Configuration
P6F94 User’s Manual 45
