CYD01S36V
CYD02S36V/36VA/CYD04S36V
CYD09S36V/CYD18S36V
Document Number: 38-06076 Rev. *G
Page 12 of 28
Maximum Ratings
Exceeding maximum ratings
[25]
may shorten the useful life of the
device. User guidelines are not tested.
Storage Temperature .................................. –65°C to +150°C
Ambient Temperature with
Power Applied ............................................ –55°C to +125°C
Supply Voltage to Ground Potential................–0.5V to +4.6V
DC Voltage Applied to
Outputs in High-Z State .......................... –0.5V to V
DD
+0.5V
DC Input Voltage .............................. –0.5V to V
DD
+ 0.5V
[26]
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage........................................... > 2000V
(JEDEC JESD22-A114-2000B)
Latch-up Current..................................................... > 200 mA
Operating Range
Range
Ambient
Temperature
V
DDIO/VTTL
V
CORE
[13]
Commercial
0°C to +70°C 3.3V±165 mV 1.8V±100 mV
Industrial
–40°C to +85°C 3.3V±165 mV 1.8V±100 mV
Notes
25. The voltage on any input or IO pin cannot exceed the power pin during power up.
26. Pulse width < 20 ns.
27. I
SB1
, I
SB2
, I
SB3
and I
SB4
are not applicable for CYD18S36V because it cannot be powered down by using chip enable pins.
28. C
OUT
also references C
IO
.
29. Except INT and CNTINT which are 20 pF.
Electrical Characteristics
Over the Operating Range
Parameter
Description
-167
-133
-100
Unit
Min Typ. Max Min Typ.
Max
Min Typ. Max
V
OH
Output HIGH Voltage (V
DD
= Min, I
OH
= –4.0 mA)
2.4
2.4
2.4
V
V
OL
Output LOW Voltage (V
DD
= Min, I
OL
= +4.0 mA)
0.4
0.4
0.4
V
V
IH
Input HIGH Voltage
2.0
2.0
2.0
V
V
IL
Input LOW Voltage
0.8
0.8
0.8
V
I
OZ
Output Leakage Current
–10
10
–10
10
–10
10
μ
A
I
IX1
Input Leakage Current Except TDI, TMS, MRST
–10
10
–10
10
–10
10
μ
A
I
IX2
Input Leakage Current TDI, TMS, MRST
–1.0
0.1
–1.0
0.1
–1.0
0.1
mA
I
CC
Operating Current for
(V
DD
= Max.,I
OUT
= 0 mA), Outputs
Disabled
CYD01S36V
CYD02S36V/
CYD02S36VA/
CYD04S36V
225 300
225
300
mA
CYD09S36V
450 600
370
540
mA
CYD18S36V
410
580
315
450
mA
I
SB1
[27]
Standby Current (Both Ports TTL Level)
CE
L
and CE
R
≥
V
IH
, f = f
MAX
90
115
90
115
mA
I
SB2
[27]
Standby Current (One Port TTL Level)
CE
L
| CE
R
≥
V
IH
, f = f
MAX
160 210
160
210
mA
I
SB3
[27]
Standby Current (Both Ports CMOS Level)
CE
L
and CE
R
≥
V
DD
– 0.2V, f = 0
55
75
55
75
mA
I
SB4
[27]
Standby Current (One Port CMOS Level)
CE
L
| CE
R
≥
V
IH
, f = f
MAX
160 210
160
210
mA
I
SB5
Operating Current (VDDIO = Max,
Iout = 0 mA, f = 0) Outputs Disabled
CYD18S36V
75
75
mA
I
CORE
[13]
Core Operating Current for (V
DD
= Max, I
OUT
= 0 mA),
Outputs Disabled
0
0
0
0
0
0
mA
Capacitance
Part Number
Parameter
[28]
Description
Test Conditions
Max
Unit
CYD01S36/
CYD02S36V/36VA/
CYD04S36V
C
IN
Input Capacitance
T
A
= 25°C, f = 1 MHz,
V
DD
= 3.3V
13
pF
C
OUT
Output Capacitance
10
pF
CYD09S36V
C
IN
Input Capacitance
22
pF
C
OUT
Output Capacitance
10
[29]
pF
CYD18S36V
C
IN
Input Capacitance
40
pF
C
OUT
Output Capacitance
20
pF
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