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© November 2008
Altera Corporation
AN 436: Using DDR3 SDRAM in Stratix III and Stratix IV Devices
Differential strobes
DQS
and
DQSn
are mandated for DDR3 SDRAM and are
associated with a group of data pins,
DQ
, for read and write operations.
DQS
,
DQSn
,
and
DQ
ports are bidirectional. Address ports are shared for read and write
operations.
Write and read operations are sent in bursts, DDR3 SDRAM supports BC of 4 and BL
of 8. DDR3 SDRAM supports CAS latencies of 5 to 10.
DDR3 SDRAM devices use the SSTL-15 1.5-V I/O standard and can hold between
512 MB and 8 GB of data. The 1.5 V operational voltage reduces power consumption
by 17% compared to DDR2 SDRAM.
All DDR3 SDRAM devices have eight internal banks. With more banks available, the
page-to-hit ratio is twice that of DDR SDRAM. DDR3 SDRAM also allows bank
interleaving, which represents a significant advantage for applications accessing
random data. Bank interleaving can be extremely effective for concurrent operations
and can hide the timing overhead that is otherwise required for opening and closing
individual banks.
DDR3 SDRAM also supports calibrated parallel ODT via an external resistor
RZQ
signal termination options of
RZQ
/2,
RZQ
/4 or
RZQ
/6
Ω
on all
DQ
,
DM
, and
DQS
and
DQSn
signals.
DDR3 SDRAM typically supports controlled output driver impedance options of
RZQ
/6 or
RZQ
/7.
DDR3 SDRAM has a maximum frequency of 800 MHz or 1600 Mbps per
DQ
pin.
DDR3 SDRAM minimum operating frequency is 300 MHz.