texet TF-127, Service Manual

Page: 97 / 205

Rev 0.2 / Jan. 2008 20
1
HY27UF(08/16)2G2B Series
2Gbit (256Mx8bit) NAND Flash
Parameter Symbol Test Conditions
3.3Volt
Unit
Min Typ Max
Operating
Current
Sequential
Read
I
CC1
t
RC
=25ns
CE=V
IL
, I
OUT
=0mA
- 15 30 mA
Program I
CC2
- - 15 30 mA
Erase I
CC3
- - 15 30 mA
Stand-by Current (TTL) I
CC4
CE=V
IH
,
WP=0V/Vcc
- 1 mA
Stand-by Current (CMOS) I
CC5
CE=Vcc-0.2,
WP=0V/Vcc
- 10 50 uA
Input Leakage Current I
LI
V
IN=
0 to Vcc (max) - -
±
10
uA
Output Leakage Current I
LO
V
OUT
=0 to Vcc (max) - -
±
10
uA
Input High Voltage V
IH
- 0.8xVcc - Vcc+0.3 V
Input Low Voltage V
IL
- -0.3 - 0.2xVcc V
Output High Voltage Level V
OH
I
OH
=-400uA 2.4 - - V
Output Low Voltage Level V
OL
I
OL
=2.1mA - - 0.4 V
Output Low Current (R/B)
I
OL
(R/B)
V
OL
=0.4V 8 10 - mA
Table 9: DC and Operating Characteristics
Parameter
Value
3.3Volt
Input Pulse Levels 0V to VCC
Input Rise and Fall Times 5ns
Input and Output Timing Levels VCC/2
Output Load (2.7V - 3.6V) 1 TTL GATE and CL=50pF
Table 10: AC Conditions