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SDRAM 128Mb F-die (x4, x8, x16)
CMOS SDRAM
Rev. 1.2 August 2004
Bank Select
Data Input Register
8M x 4 / 4M x 8 / 2M x 16
8M x 4 / 4M x 8 / 2M x 16
Sense AMP
O
u
tput Buf
fer
I/O Control
Column Decoder
Latency & Burst Length
Programming Register
Addre
s
s Register
Row Buf
fer
Refresh Co
unter
Row Deco
der
Col. Buf
fer
LRAS
LCBR
LCKE
LRAS
LCBR
LWE
LDQM
CLK
CKE
CS
RAS
CAS
WE
L(U)DQM
LWE
LDQM
DQi
CLK
ADD
LCAS
LWCBR
8M x 4 / 4M x 8 / 2M x 16
8M x 4 / 4M x 8 / 2M x 16
Timing Register
* Samsung Electronics reserves the right to change products or specification without notice.
FUNCTIONAL BLOCK DIAGRAM