8.5 Power Consumption - Power Modes (continued)
When measured on the CC26x2RBEM-7ID reference design with T
c
= 25 °C, V
DDS
= 3.0 V with DC/DC enabled unless
otherwise noted.
PARAMETER
TEST CONDITIONS
TYP
UNIT
I
SCE
Active mode
24 MHz, infinite loop
808.5
µA
Low-power mode
2 MHz, infinite loop
30.1
(1)
Only one UART running
(2)
Only one SSI running
(3)
Only one GPTimer running
8.6 Power Consumption - Radio Modes
When measured on the CC26x2RBEM-7ID reference design with T
c
= 25 °C, V
DDS
= 3.6 V with DC/DC enabled unless
otherwise noted.
PARAMETER
TEST CONDITIONS
TYP
UNIT
Radio receive current
2440 MHz
7.3
mA
Radio transmit current
0 dBm output power setting
2440 MHz
7.9
mA
+5 dBm output power setting
2440 MHz
10.2
mA
8.7 Nonvolatile (Flash) Memory Characteristics
Over operating free-air temperature range and V
DDS
= 3.0 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Flash sector size
8
KB
Supported flash erase cycles before failure, full bank
30
k Cycles
Supported flash erase cycles before failure, single
sector
60
k Cycles
Maximum number of write operations per row before
sector erase
83
Write
Operations
Flash retention
105 °C
11.4
Years at
105 °C
Flash sector erase current
Average delta current
10.7
mA
Zero cycles
10
ms
Flash write current
Average delta current, 4 bytes at a time
6.2
mA
4 bytes at a time
21.6
µs
(1)
A full bank erase is counted as a single erase cycle on each sector
(2)
Up to 4 customer-designated sectors can be individually erased an additional 30k times beyond the baseline bank limitation of 30k
cycles
(3)
Each wordline is 2048 bits (or 256 bytes) wide. This limitation corresponds to sequential memory writes of 4 (3.1) bytes minimum per
write over a whole wordline. If additional writes to the same wordline are required, a sector erase is required once the maximum
number of write operations per row is reached.
(4)
This number is dependent on Flash aging and increases over time and erase cycles
(5)
Aborting flash during erase or program modes is not a safe operation.
8.8 Thermal Resistance Characteristics
PACKAGE
UNIT
RGZ
(VQFN)
48 PINS
R
θJA
Junction-to-ambient thermal resistance
23.4
°C/W
R
θJC(top)
Junction-to-case (top) thermal resistance
13.3
°C/W
SWRS232D – FEBRUARY 2019 – REVISED FEBRUARY 2021
Copyright © 2021 Texas Instruments Incorporated
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