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SLLU298 – May 2018
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ISO5852SDW Driving and Protecting SiC and IGBT Power Modules
1.3
Description
Compact driver board ISO5852SDWEVM-017 supports SiC power modules by reducing parasitics,
minimizing switching loss and EMI and providing full required protection and diagnostics features.
1.3.1
Specification
Electrical parameters of the board are shown in
Table 1
.
Table 1. Electrical Specifications
PARAMETER
TEST CONDITION
MIN
NOM
MAX
UNIT
SUPPLY VOLTAGES AND CURRENTS
VCC
Primary supply voltage
4.5
5.0
5.5
V
IVCCQ
Primary quiescent current
IN+, IN- low
30
mA
IVCCS
Primary supply current
FSW = 10kHz,
CLOAD = 10nF
210
mA
VCCUR
Vcc rising UVLO threshold
4.5
4.6
V
VCCUF
Vcc falling UVLO threshold
4.2
4.3
V
VCCUH
Vcc UVLO hysteresis
0.2
V
VCCOR
Vcc rising OVLO threshold
5.7
5.8
V
VCCOF
Vcc falling OVLO threshold
5.4
5.5
V
VCCOH
Vcc UVLO hysteresis
0.2
V
VCC2U,
VCC2L
Turn ON drive voltages
Transformer
750342879
15
17
19
V
VCC2U,
VCC2L
Turn OFF drive voltages
Transformer
750313734
–5.9
–5
–4.7
V
DRIVE CURRENT AND POWER
IOH
Peak source current
CLOAD = 10nF
15
20
A
IOL
Peak sink current
CLOAD = 10nF
15
20
A
PDRV
Drive power per channel
At 25
⁰
C
2.0
W
INPUT/OUTPUT SIGNALS
VINR, VRSTR INL+, INU+, RST rising threshold
0.7 ×
VCC
V
VINF, VRSTF
INL+, INU+, RST falling threshold
0.3 ×
VCC
V
VINH, VRSTH INL+, INU+, RST hysteresis
0.15 ×
VCC
V
VFLU, VFLL
FL, FU Fault voltage
IFLT = 5 mA
0.2
V
VFLU, VFLL
FL, FU Fault current
Internal pullup
current
100
µA
VFLTH
F high level
At VCC = 4.5 V
4.4
4.5
V
VFLTL
F low level
At VCC = 4.5 V
0.1
V
ATEMP
Thermistor monitor gain
8.2
ARAIL
Input rail monitor gain
8.2
TIMING PARAMETERS
TRISE
Drive output rise time
CLOAD = 10nF
30
ns
TFALL
Drive output fall time
CLOAD = 10nF
34
ns
TPROP
Propagation delay
CLOAD = 100nF
130
150
ns
TSKEW
Pulse skew
20
ns
TGLITCH
Input glitch filter
20
30
40
ns
TUVLO
UVLO recovery delay
50
µs
TOVOL
OVLO recovery delay
50
µs