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Schematic and Bill of Materials
25
SLLU298 – May 2018
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Copyright © 2018, Texas Instruments Incorporated
ISO5852SDW Driving and Protecting SiC and IGBT Power Modules
4
Schematic and Bill of Materials
4.1
Schematic
The schematic of ISO5852SDWEVM-017 board is shown in
Figure 17
. Functional blocks of the schematic
are shown in
Figure 18
and below are listed the functions that related blocks perform.
•
B1 - high side +17.5V/-5V bias supply
•
B2 - low side +17.5V/-5V bias supply
•
B3 - connectors, UVLO/OVLO protection, fault and reset logic, overlapping option setting
•
B4 - high side driver with booster and desaturation protection
•
B5 - low side driver with booster and desaturation protection
•
B6 - input bus voltage sensing isolated amplifier
•
B7 - thermistor based temperature sense isolated amplifier
The ISO5852SDWEVM-017 EVM allows following adjustments depending on applications.
•
By default the board set into output overlapping protection mode. Removing resistor shunts R48 and
R52 allows output overlapping
•
When attaching EVM to power module, it is recommended to remove output load capacitors C16 and
C36
•
To set turn ON and OFF output driver voltages beoynd the default, UVLO/OVLO protection can be
disabled by removing resistor R53
•
By removing resistive shunt R65 and using separate input supplies applied to connectors J1 and J2,
turn ON and turn OFF drive voltages can be independently adjusted. The EVM maintains functionality
if the VCC input supply voltages are within range from 3V to 5.5V. This allows set drive voltages
approximately from +12 V to +21 V for turn ON drive voltage and from -3.5 V to -7 V for turn OFF drive
voltage
•
Change of C15 and C35 values allows soft shutdown adjustment during short circuit protection
respectively for high side and low side drivers
•
By default resistors R1 and R17 are not included. Adding these resistors provide additional current
source for desaturation protection circuit