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SLLU298 – May 2018
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Copyright © 2018, Texas Instruments Incorporated
ISO5852SDW Driving and Protecting SiC and IGBT Power Modules
1
Overview
The ISO5852SDWEVM-017 is a compact, dual channel isolated gate driver board providing drive, bias
voltages, protection and diagnostic needed for half-bridge SiC MOSFET and Si IGBT Power Modules
housed in 150-mm × 62-mm × 17-mm packages.
This TI EVM is based on 5.7-kVrms reinforced isolation driver IC ISO5852SDW in SOIC-16DW package
with 8.0 mm creepage and clearance. The EVM includes SN6505B based isolated DC-DC transformer
bias supplies.
Isolated temperature and input rail monitoring is provided by 5-kVrms isolated amplifiers AMC1301.
Compact form factor 100-mm × 62-mm × 6.6-mm, excluding connector height, allows direct connection to
standard 62-mm half-bridge modules.
1.1
Features
This EVM supports the following features:
•
20-A peak split sink and source drive current to optimize turn on and turn off switching time
•
Two, 2-W output bias supplies with undervoltage lockout (UVLO) and overvoltage lockout (OVLO)
protection
•
Turn ON and turn OFF drive voltages can be programmed independently from 12 V to 21 V and from
–3.3 V to –7 V respectively by using two input supplies from 3.3 V to 5.3 V
•
Robust noise-immune solution with CMTI >100 V/ns
•
Supports 5-kVrms Reinforced Isolation for input rail up to 1700-V
•
Programmable Short-circuit sensing and Soft Turn-OFF protection by de-saturation circuit
•
2-A Active Miller Clamp
•
Output Short Circuit Clamp
•
Fault feedback with reset
•
Temperature and input rail monitoring
1.2
Applications
This EVM is used in the following applications:
•
Solar inverters
•
Motor drives
•
HEV and EV chargers
•
Wind turbines
•
Transportation
•
UPS