2003 Sep 19
12
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
BLF278
Fig.14 Input impedance as a function of frequency
(series components); typical values per
section.
Class-B operation; V
DS
= 50 V; I
DQ
= 2
×
0.1 A;
R
GS
= 4
Ω
(per section); P
L
= 300 W.
handbook, halfpage
25
75
125
f (MHz)
175
2
1
Zi
(
Ω
)
ri
xi
−
1
−
2
0
MGE685
Fig.15 Load impedance as a function of frequency
(series components); typical values per
section.
Class-B operation; V
DS
= 50 V; I
DQ
= 2
×
0.1 A;
R
GS
= 4
Ω
(per section); P
L
= 300 W.
handbook, halfpage
25
75
125
f (MHz)
175
8
6
ZL
(
Ω
)
XL
RL
2
0
4
MGE686
Fig.16 Definition of MOS impedance.
handbook, halfpage
MBA379
Zi
ZL
Fig.17 Power gain as a function of frequency;
typical values per section.
Class-B operation; V
DS
= 50 V; I
DQ
= 2
×
0.1 A;
R
GS
= 4
Ω
(per section); P
L
= 300 W.
handbook, halfpage
25
30
20
10
0
75
125
175
MGE687
f (MHz)
Gp
(dB)
