2003 Sep 19
4
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
BLF278
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor section
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0; I
D
= 100 mA
125
−
−
V
I
DSS
drain-source leakage current
V
GS
= 0; V
DS
= 50 V
−
−
2.5
mA
I
GSS
gate-source leakage current
V
GS
=
±
20 V; V
DS
= 0
−
−
1
µ
A
V
GSth
gate-source threshold voltage
V
DS
= 10 V; I
D
= 50 mA
2
−
4.5
V
∆
V
GS
gate-source voltage difference
of both sections
V
DS
= 10 V; I
D
= 50 mA
−
−
100
mV
g
fs
forward transconductance
V
DS
= 10 V; I
D
= 5 A
4.5
6.2
−
S
g
fs1
/g
fs2
forward transconductance ratio
of both sections
V
DS
= 10 V; I
D
= 5 A
0.9
−
1.1
R
DSon
drain-source on-state resistance V
GS
= 10 V; I
D
= 5 A
−
0.2
0.3
Ω
I
DSX
drain cut-off current
V
GS
= 10 V; V
DS
= 10 V
−
25
−
A
C
is
input capacitance
V
GS
= 0; V
DS
= 50 V; f = 1 MHz
−
480
−
pF
C
os
output capacitance
V
GS
= 0; V
DS
= 50 V; f = 1 MHz
−
190
−
pF
C
rs
feedback capacitance
V
GS
= 0; V
DS
= 50 V; f = 1 MHz
−
14
−
pF
C
d-f
drain-flange capacitance
−
5.4
−
pF
V
GS
group indicator
GROUP
LIMITS
(V)
GROUP
LIMITS
(V)
MIN.
MAX.
MIN.
MAX.
A
2.0
2.1
O
3.3
3.4
B
2.1
2.2
P
3.4
3.5
C
2.2
2.3
Q
3.5
3.6
D
2.3
2.4
R
3.6
3.7
E
2.4
2.5
S
3.7
3.8
F
2.5
2.6
T
3.8
3.9
G
2.6
2.7
U
3.9
4.0
H
2.7
2.8
V
4.0
4.1
J
2.8
2.9
W
4.1
4.2
K
2.9
3.0
X
4.2
4.3
L
3.0
3.1
Y
4.3
4.4
M
3.1
3.2
Z
4.4
4.5
N
3.2
3.3
