2003 Sep 19
13
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
BLF278
Class-AB operation
RF performance in CW operation in a common source push-pull test circuit. T
h
= 25
°
C; R
th mb-h
= 0.15 K/W unless
otherwise specified. R
GS
= 2.8
Ω
per section; optimum load impedance per section = 0.74 + j2
Ω
; (V
DS
= 50 V).
Ruggedness in class-AB operation
The BLF278 is capable of withstanding a load mismatch corresponding to VSWR = 7:1 through all phases under the
following conditions: V
DS
= 50 V; f = 225 MHz at rated output power.
MODE OF OPERATION
f
(MHz)
V
DS
(V)
I
DQ
(A)
P
L
(W)
G
p
(dB)
η
D
(%)
CW, class-AB
225
50
2
×
0.5
250
>14
typ. 16
>50
typ. 55
