2003 Sep 19
19
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
BLF278
Fig.23 Input impedance as a function of frequency
(series components); typical values per
section.
Class-AB operation; V
DS
= 50 V; I
DQ
= 2
×
0.5 A;
R
GS
= 2.8
Ω
(per section); P
L
= 250 W.
handbook, halfpage
150
200
250
2
1
−
1
–2
0
MGE611
ri
zi
(
Ω
)
xi
f (MHz)
Fig.24 Load impedance as a function of frequency
(series components); typical values per
section.
Class-AB operation; V
DS
= 50 V; I
DQ
= 2
×
0.5 A;
R
GS
= 2.8
Ω
(per section); P
L
= 250 W.
handbook, halfpage
150
250
200
f (MHz)
3
2
1
0
MGE625
XL
RL
ZL
(
Ω
)
Fig.25 Definition of MOS impedance.
handbook, halfpage
MBA379
Zi
ZL
Fig.26 Power gain as a function of frequency;
typical values per section.
Class-AB operation; V
DS
= 50 V; I
DQ
= 2
×
0.5 A;
R
GS
= 2.8
Ω
(per section); P
L
= 250 W.
handbook, halfpage
150
200
250
20
0
10
MGE624
Gp
(dB)
f (MHz)
