IEI Technology A200C-800Z-R10, User Manual, Page: 119 / 177

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A200C-800Z-R10 Motherboard
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EEPROM contains all necessary DIMM specifications the including speed of the individual
components such as CAS and bank cycle time as well as valid settings for the module and
the manufacturer's code. The SPD enables the BIOS to read the spec sheet of the DIMMs
on boot-up and then adjust the memory timing parameters accordingly.
Disabled DRAM timing parameters can be manually set using
the DRAM sub-items
Enabled (D
EFAULT
) DRAM timing parameter are set according to the
DRAM Serial Presence Detect (SPD)
The Configure DRAM Timing by SPD option is disabled, the following configuration
options appear.
DRAM CAS# Latency [2.5]
DRAM RAS# Precharge [3 clocks]
DRAM RAS# to CAS# Delay [3 clocks]
DRAM Precharge Delay [7 clocks]
DRAM Burst Length [8]
DRAM CAS# Latency [2.5]
The CAS Latency Time configuration option refers to the Column Address Strobe (CAS)
delay time. (To be able to change this configuration option the DRAM Latency Timing
configuration option must be set to “ Manual ”) The following configuration options are
available
2.5 nanoseconds (D
EFAULT
)
2 nanoseconds
DRAM RAS# Precharge [3 clocks]
The DRAM RAS# Precharge option indicates how fast your RAM can terminate the
access of one row and start accessing another. (To be able to change this configuration
option the DRAM RAS# Precharge configuration option must be set to “ Manual ”) The
following configuration options are available
2 clocks