Model 5305B
Replaceable Parts
ENCAP
= encapsulated
min
= minute (time)
PIV
= peak inverse voltage
TFT
= thin-film transistor
EXT
= external
…’
= minute (plane angle)
pk
= peak
TGL
= toggle
F
= farad
MINAT
= miniature
PL
= phase lock
THD
= thread
FET
= field-effect transistor
mm
= millimeter
PLO
= phase lock oscillator
THRU
= through
F/F
= flip-flop
MOD
= modulator
PM
= phase modulation
TI
= titanium
FH
= flat head
MOM
= momentary
PNP
= positive-negative-
TOL
= tolerance
FOL H
= fiIIister head
MOS
= metal-oxide semi-
positive
TRIM
= trimmer
FM
= frequency modulation
conductor
P/O
= part of
TSTR
= transistor
FP
= front panel
ms
= millisecond
POLY
= polystyrene
TTL
= transistor-transistor
FREO
= frequency
MTG
= mounting
PORC
= porcelain
logic
FXD
= fixed
MTR
= meter (indicating
POS
= positive; position(s)
TV
= television
g
= gram
device)
(used in parts list)
TVI
= television interference
GE
= germanium
mV
= millivolt
POSN
= position
TWT
= traveling wave tube
GHz
= gigahertz
mVac
= millivolt, ac
POT
= potentiometer
U
= micro (10
-6
) (used in
GL
= glass
mVdc
= millivolt, dc
p-p
= peak-to-peak
parts list)
GND
= ground(ed)
mVpk
= millivolt, peak
PP
= peak-to-peak (used in
UF
= microfarad (used in
H
= Henry
mVp-p
= millivolt, peak-to-peak
parts list)
parts list)
h
= hour
mVrms
= millivolt, rms
PPM
= pulse-position
UHF
= ultrahigh frequency
HET
= heterodyne
mW
= milliwatt
modulation
UNREG
= unregulated
HEX
= hexagonal
MUX
= multiplex
PREAMPL = preamplifier
V
= volt
HD
= head
MY
= mylar
PRF
= pulse-repetition
VA
= voltampere
HDW
= hardware
µA
= microampere
frequency
Vac
= volts ac
HF
= high frequency
µF
= microfarad
PRR
= pulse repetition rate
VAR
= variable
HG
= mercury
µH
= microhenry
ps
= picosecond
VCO
= voltage-controlled
HI
= high
µmho
= micromho
PT
= point
oscillator
HP
= Hewlett-Packard
µs
= microsecond
PTM
= pulse-time modulation
Vdc
= volts dc
HPF
= high pass filter
µV
= microvolt
PWM
= pulse-width modulation
VDCW
= volts dc, working (used
HR
= hour (used in parts list)
µVac
= microvolt, ac
PWV
= peak working voltage
in parts list)
HV
= high voltage
µVdc
= microvolt, dc
RC
= resistance capacitance
V(F)
= volts. filtered
Hz
= Hertz
µVpk
= microvolt, peak
RECT
= rectifier
VFO
= variable-frequency
IC
= integrated circuit
µVp-p
= microvolt, peak-to-
REF
= reference
oscillator
ID
= inside diameter
peak
REG
= regulated
VHF
= very-high frequency
IF
= intermediate frequency
µVrms
= microvolt, rms
REPL
= replaceable
Vpk
= volts peak
IMPG
= impregnated
µW
= microwatt
RF
= radio frequency
Vp-p
= Volts peak-to-peak
In
= inch
nA
= nanoampere
RFI
= radio frequency
Vrms
= volts rms
INCD
= incandescent
NC
= no connection
interference
VSWR
= voltage standing wave
INCL
= include(s)
N/C
= normally closed
RH
= round head; right hand
ratio
INP
= input
NE
= neon
RLC
= resistance-inductance-
VTO
= voltage-tuned oscillator
INS
= insulation
NEG
= negative
capacitance
VTVM
= vacuum-tube voltmeter
INT
= internal
nF
= nanofarad
RMO
= rack mount only
V(X)
= volts. switched
kg
= kilogram
NI PL
= nickel plate
rms
= root-mean-square
W
= watt
kHz
= kilohertz
N/O
= normally open
RND
= round
WI
= with
k
Ω
= kilohm
NOM
= nominal
ROM
= read-only memory
WIV
= working inverse voltage
kV
= kilovolt
NORM
= normal
R&P
= rack and panel
WW
= wirewound
Ib
= pound
NPN
= negatlve-posltlve-
RWV
= reverse working voltage
W/O
= without
LC
= inductance-capacitance
negative
S
= scattering parameter
YIG
= yttrium-iron-garnet
LED
= light-emitting diode
NPO
= negative-positive zero
s
= second (time)
Zo
= characteristic
LF
= low frequency
(zero temperature
…’’
= second (plane angle)
impedance
LG
= long
coefficient)
S-B
= slow-blow (fuse (used
LH
= left hand
NRFR
= not recommended for
in parts list)
LIM
= limit
field replacement
SCR
= silicon controlled
LIN
= linear taper (used in
NSR
= not separately
rectifier; screw
NOTE
parts list)
replaceable
SE
= selenium
All abbreviations in the parts
Iin
= linear
ns
= nanosecond
SECT
= sections
list will be in upper case.
LK WASH = lockwasher
nW
= nanowatt
SEMICON = semiconductor
LO
= low; local oscillator
OBD
= order by description
SHF
= superhigh frequency
LOG
= logarithmic taper
OD
= outside diameter
SI
= Silicon
(used in parts list)
OH
= oval head
SIL
= silver
log
= logarithm(ic)
OP AMPL = operational amplifier
SL
= slide
LPF
= low pass filter
OPT
= option
SNR
= signal-to-noise ratio
LV
= low voltage
OSC
= oscillator
SPDT
= single-pole, double-
m
= meter (distance)
OX
= oxide
throw
mA
= milliampere
oz
= ounce
SPG
= spring
MAX
= maximum
Ω
= ohm
SR
= split ring
Abbreviation Prefix
Multiple
M
Ω
= megohm
P
= peak (used in parts
SPST
= single-pole. single-
T
tera
10
12
MEG
= meg (10
6
) (used in
list)
throw
G
giga
10
9
parts list)
PAM
= pulse-amplitude
SSB
= single sideband
M
mega
10
6
MET FLM = metal film
modulation
SST
= stainless steel
k
kilo
10
3
MET OX
= metal oxide
PC
= printed circuit
STL
= steel
da
deka
10
MF
= medium frequency;
PCM
= pulse-code modulation;
SQ
= square
d
deci
10
-1
microfarad (used in
pulse-count modulation
SWR
= standing-wave ratio
c
centi
10
-2
parts list)
PDM
= pulse-duration
SYNC
= synchronize
m
milli
10
-3
MFR
= manufacturer
modulation
T
= timed (slow-blow fuse)
µ
micro
10
-6
mg
= milligram
pF
= picofarad
TA
= tantalum
n
nano
10
-9
MHz
= megahertz
PH BRZ
= phosphor bronze
TC
= temperature
p
pico
10
-12
mH
= millihenry
PHL
= Phillips
compensating
f
femto
10
-15
mho
= mho
PIN
= positive-instrinsic-
TD
= time delay
a
atto
10
-18
MIN
= minimum
negative
TERM
= terminal
9E-6-2
MULTIPLIERS
ABBREVIATIONS (CONTINUED)
Summary of Contents for 5305 B
Page 1: ...O P E R A T I N G A N D S E R V I C E M A N U A L 5305 B 1300 MHz COUNTER ...
Page 21: ...Model 5305B Maintenance STEP A STEP B 9E 5 2 Figure 9E 5 1 Separation Procedure ...
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