Rev. 1.0, 03/01, page 219 of 280
16.2.6
Flash Memory Characteristics (Preliminary)
Table 16-7 Flash Memory Characteristics (Preliminary)
V
CC
= 3.0 V to 5.5 V, V
SS
= 0.0 V, T
a
= –20°C to +75°C, unless otherwise specified.
Test
Values
Item
Symbol
Condition
Min
Typ
Max
Unit
Programming time (per 128 bytes)
*
1
*
2
*
4
t
P
—
7
—
ms
Erase time (per block)
*
1
*
3
*
6
t
E
—
100
—
ms
Reprogramming count
N
WEC
—
—
100
Times
Programming
Wait time after SWE
bit setting
*
1
x
1
—
—
µs
Wait time after PSU
bit setting
*
1
y
50
—
—
µs
Wait time after P bit setting
z1
1
≤
n
≤
6
28
30
32
µs
*
1
*
4
z2
7
≤
n
≤
1000
198
200
202
µs
z3
Additional-
programming
8
10
12
µs
Wait time after P bit clear
*
1
α
5
—
—
µs
Wait time after PSU bit clear
*
1
β
5
—
—
µs
Wait time after PV
bit setting
*
1
γ
4
—
—
µs
Wait time after dummy write
*
1
ε
2
—
—
µs
Wait time after PV bit clear
*
1
η
2
—
—
µs
Wait time after SWE
bit clear
*
1
θ
100
—
—
µs
Maximum
programming count
*
1
*
4
*
5
N
—
—
1000
Times
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