Toa EXES-6000, Эксплуатация и устранение неисправностей

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4. Line Memory and Signal Memory
Line memory is a 32 words by 8 bits memory
formed from 4 RAM's of 16 words by 4 bits. In
this line memory, station numbers of the
stations engaged in coversations are written
into the addresses that correspond to the link
to be used in the order of a calling side (T) and
called side (R). The data is accessed and read
cyclically word byword in synchronization with
the link change-over switches (Ty
1-
Ty
32
, Rx
1 -
Rx
32
) in the DL unit and controls the corres-
ponding time division switch in the LM unit
according to the contents of the data.
Signal memory is a 16 words by 4 bits RAM, in
which signal codes or PTT/non-PTT mode each
link uses are written. Signal switches (Sy
1-
Sy
32
)
of the DL unit's links and time division switch-
es (Sx
1 -
Sx
8
) in the SG unit are controlled with
the data read out in the same manner as that of
the line memory.
Memory maps of the line memory and signal
memory are as follows:
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