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SLAS826F – MARCH 2015 – REVISED MARCH 2017
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Detailed Description
Copyright © 2015–2017, Texas Instruments Incorporated
Table 6-33. RSTCTL Registers (continued)
REGISTER NAME
ACRONYM
OFFSET
Pin Reset Status Clear
RSTCTL_PINRESET_CLR
114h
Reboot Reset Status
RSTCTL_REBOOTRESET_STAT
118h
Reboot Reset Status Clear
RSTCTL_REBOOTRESET_CLR
11Ch
CS Reset Status
RSTCTL_CSRESET_STAT
120h
CS Reset Status Clear
RSTCTL_CSRESET_CLR
124h
Table 6-34. SYSCTL Registers
REGISTER NAME
ACRONYM
OFFSET
Reboot Control
SYS_REBOOT_CTL
0000h
NMI Control and Status
SYS_NMI_CTLSTAT
0004h
Watchdog Reset Control
SYS_WDTRESET_CTL
0008h
Peripheral Halt Control
SYS_PERIHALT_CTL
000Ch
SRAM Size
SYS_SRAM_SIZE
0010h
SRAM Bank Enable
SYS_SRAM_BANKEN
0014h
SRAM Bank Retention Control
SYS_SRAM_BANKRET
0018h
Flash Size
SYS_FLASH_SIZE
0020h
Digital I/O Glitch Filter Control
SYS_DIO_GLTFLT_CTL
0030h
IP Protected Secure Zone Data Access Unlock
SYS_SECDATA_UNLOCK
0040h
Master Unlock
SYS_MASTER_UNLOCK
1000h
Boot Override Request 0
SYS_BOOTOVER_REQ0
1004h
Boot Override Request 1
SYS_BOOTOVER_REQ1
1008h
Boot Override Acknowledge
SYS_BOOTOVER_ACK
100Ch
Reset Request
SYS_RESET_REQ
1010h
Reset Status and Override
SYS_RESET_STATOVER
1014h
System Status
SYS_SYSTEM_STAT
1020h
6.4
Memories on the MSP432P401x
The MSP432P401x MCUs include flash memory and SRAM for general application purposes. In addition,
the devices include a backup memory (a portion of total available SRAM) that is retained in low-power
modes.
6.4.1
Flash Memory
The MSP432P401x MCUs include a high-endurance low-power flash memory that supports up to a
minimum of 20000 write or erase cycles. The flash memory is 128 bits wide, thereby enabling high code
execution performance by virtue of each fetch returning up to four 32-bit instructions (or up to eight 16-bit
instructions). The flash is further divided into two types of subregions: main memory and information
memory.
From a physical perspective, the flash memory comprises two banks, with the main and information
memory regions divided equally between the two banks. This permits an application to carry out a
simultaneous read or execute operation from one bank while the other bank may be undergoing a
program or erase operation.
shows the memory map of the flash on MSP432P401x MCUs.