Texas Instruments LMG1205HBEVM, Руководство пользователя

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Description
7 SNVU552 – March 2017
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Copyright © 2017, Texas Instruments Incorporated
Using the LMG1205HBEVM GaN Half-Bridge Power Stage EVM
1.2 Typical Applications
The LMG1205 is suited for use in high frequency DC-DC converters. It is simple to use and requires few
external components. Typical applications include:
• High-speed, synchronous buck converters
• Class D amplifiers for audio
• 48-V point-of-load converters for industrial, computing, and telecom
2 EVM Kit Contents
The kit contains the following:
• Safety instructions
• LMG1205HBEVM PCB assembly
3 Electrical Performance Specifications
Table 1. LMG1205HBEVM Electrical Performance Specifications
PARAMETER TEST CONDITIONS MIN TYP MAX UNITS
V
BUS
Half-bridge input voltage Connected to drain of high-side FET 80 V
V
OUT
Half-bridge output voltage Connected through inductor L1 to SW 80 V
V
IN
Input voltage for 5-V VDD LDO 5.5 10 V
V
PWM
PWM input voltage 0 5 V
I
OUT
Half-bridge output current 10 A
P
OUT
Half-bridge output power LMG1205 and GaN FETs T
J
≤ 125ºC 160 W
f
SW
Switching frequency 0.1 1 5 MHz