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List of Materials
17
SNVU552 – March 2017
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Copyright © 2017, Texas Instruments Incorporated
Using the LMG1205HBEVM GaN Half-Bridge Power Stage EVM
Table 4. LMG1205HBEVM List of Materials
(1)
(continued)
DESIGNATOR
QTY
VALUE DESCRIPTION
PART NUMBER
MANUFACTURER
(3)
No alternate component manufacturer
TP6
1
Test Point, Miniature, Black, TH
5001
Keystone
U1
1
80-V, 1.2-A / 5-A, Half-Bridge Gate Driver for
Enhancement Mode GaN FETs, YFX0012AHAP
(DSBGA-12)
LMG1205YFXR
Texas Instruments
(3)
U2
1
Triple Schmitt-Trigger Inverter, DCU0008A
(VSSOP-8)
SN74LVC3G14DCUR
Texas Instruments
(3)
U3
1
1-A Low Dropout CMOS Linear Regulators
Stable with Ceramic Output Capacitors, 6-pin
LLP, Pb-Free
LP38690SD-5.0/NOPB
Texas Instruments
(3)
U4
1
Dual Schmitt-Trigger Inverter, DBV0006A (SOT-
6)
SN74LVC2G14DBVR
Texas Instruments
(3)
C10
0
22 µF
CAP, AL, 22 µF, 20 V, ±20%, 0.06
Ω
, SMD
APXH200ARA220MF60G
Chemi-Con
C22
0
47 µF
CAP, AL, 47 µF, 20 V, ±20%, 0.045
Ω
, SMD
APXH200ARA470MH70G Chemi-Con
C23
0
2.2 µF
CAP, CERM, 2.2 µF, 100 V, ±10%, X7R, 1210
C1210C225K1RACTU
Kemet
R5
0
0
RES, 0
Ω
, 5%, 0.063 W, 0402
CRCW04020000Z0ED
Vishay-Dale