Texas Instruments LMG1205HBEVM, Руководство пользователя

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List of Materials
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16 SNVU552 – March 2017
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Using the LMG1205HBEVM GaN Half-Bridge Power Stage EVM
9 List of Materials
NOTE: Moisture and other contaminants in the air may provide an environment which allows
dendrite growth under the LMG1205 driver or the GaN MOSFETs on this EVM and lead to
leakage or shorting across high-voltage terminals. The standard assembly of this EVM does
not have underfill material and should be used in low-contaminant conditions. An underfill
material such as Loctite Hysol FP4549Si or Shin-Etsu SMC375X7 should be used in
applications where the board is exposed to moisture.
(1)
Unless otherwise noted, all parts may be substituted with equivalents
(2)
EPC2001 is an acceptable substitute and some EVMs may be assembled using this part number
Table 4. LMG1205HBEVM List of Materials
(1)
DESIGNATOR QTY VALUE DESCRIPTION PART NUMBER MANUFACTURER
PCB1 1 Printed-Circuit Board SV601338 Any
C1 1 10 µF CAP, CERM, 10 µF, 25 V, ±10%, X5R, 0805 C2012X5R1E106K125AB TDK
C2, C20 2 2.2 µF CAP, CERM, 2.2 µF, 16 V, ±10%, X7R, 0805 C0805C225K4RACTU Kemet
C3, C4 2 0.1 µF CAP, CERM, 0.1 µF, 16 V, ±5%, X7R, 0603 0603YC104JAT2A AVX
C5, C7 2 2.2 µF CAP, CERM, 2.2 µF, 10 V, ±10%, X7R, 0603 GRM188R71A225KE15D MuRata
C6 1 100 pF CAP, CERM, 100 pF, 25 V, ±10%, X7R, 0603 06033C101KAT2A AVX
C8, C9 2 100 pF CAP, CERM, 100 pF, 50 V, ±5%, C0G/NP0,
0402 CC0402JRNPO9BN101 Yageo America
C11, C26 2 10 µF CAP, CERM, 10 µF, 100 V, ±20%, X7R, 2220 22201C106MAT2A AVX
C12, C13, C24, C25 4 2.2 µF CAP, CERM, 2.2 µF, 100 V, ±10%, X7R, 1210 C1210C225K1RACTU Kemet
C14, C15, C16 3 0.1 µF CAP, CERM, 0.1 µF, 100 V, ±10%, X7R, 0805 C0805C104K1RACTU Kemet
C17, C27 2 0.1 µF CAP, CERM, 0.1uF, 25 V, ±10%, X7R, 0603 GRM188R71E104KA01D MuRata
C18 1 0.1 µF CAP, CERM, 0.1 µF, 10 V, ±10%, X5R, 0402 C1005X5R1A104K050BA TDK
C19, C28 2 10 pF CAP, CERM, 10 pF, 50 V, ±5%, C0G/NP0, 0402 500R07S100JV4T Johanson Technology
C21 1 1 µF CAP, CERM, 1 µF, 25 V, ±10%, X5R, 0402 C1005X5R1E105K050BC TDK
D1, D2 2 40 V Diode, Schottky, 40 V, 0.03 A, SOD-523 SDM03U40-7 Diodes Inc.
D3, D4 2 Green LED, Green, SMD LTST-C170KGKT Lite-On
H1, H2, H3, H4 4 Machine Screw, Round, #4-40 x 1/4, Nylon,
Philips panhead NY PMS 440 0025 PH B&F Fastener Supply
H5, H6, H7, H8 4 Standoff, Hex, 0.5"L #4-40 Nylon 1902C Keystone
J1 1 Terminal Block, 2.54 mm, 2x1, Brass, TH OSTVN02A150 On-Shore Technology
J2 1 Header, 100 mil, 4x1, Tin, TH 5-146278-4 TE Connectivity
J3, J4 2 Terminal Block, 2x1, 5.08 mm, TH 282841-2 TE Connectivity
J5 1 Header, 100 mil, 2x1, Gold, TH TSW-102-07-G-S Samtec
L1 1 4.7 µH Inductor, Shielded, Composite, 4.7 µH, 10.5 A,
0.00889
Ω
, SMD
XAL8080-472ME Coilcraft
Q1, Q2 2 100 V MOSFET, N-CH, 100 V, 36 A, 4.105x1.632mm EPC2001C
(2)
EPC
R1, R4 2 47 RES, 47 Ω , 5%, 0.063 W, 0402 CRCW040247R0JNED Vishay-Dale
R2, R6 2 10.0 k RES, 10.0 k Ω , 1%, 0.063 W, 0402 CRCW040210K0FKED Vishay-Dale
R3 1 0 RES, 0
Ω
, 5%, 0.063 W, 0402 CRCW04020000Z0ED Vishay-Dale
R7 1 0.05 RES, 0.05
Ω
, 1%, 0.1 W, 0603 ERJ-L03KF50MV Panasonic
R8, R10, R12, R13 4 0 RES, 0, 5%, 0.063 W, 0402 ERJ-2GE0R00X Panasonic
R11 1 0.005 RES, 0.005, 1%, 2 W, 2512 WIDE FCSL64R005FER Ohmite
R15 1 1.0 k RES, 1.0 k Ω , 5%, 0.1 W, 0603 CRCW06031K00JNEA Vishay-Dale
R16 1 100 k RES, 100 k, 5%, 0.25 W, 1206 CRCW1206100KJNEA Vishay-Dale
TP1 1 Test Point, Miniature, Yellow, TH 5004 Keystone
TP2, TP10 2 Black Test Point, Miniature, Black, TH 5001 Keystone
TP5, TP7 2 Red Test Point, Miniature, Red, TH 5000 Keystone