Sony Vaio VGN-S350F, Руководство по обслуживанию

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1-26
IC
VGN- S36C/S36GP/S36LP/S36SP/S36TP/S38CP/ S52B/
S62PS/S62PSY/S62S/ S350F/S350FP/ S360/S360P/ S370F
(J/AM /AO )
Confidential
ELECTRICAL CHARACTERISTICS (continued)
(VDCIN = VCSSP = VCSSN = 18V, VBATT = VCSIP = VCSIN = 12V, VREFIN = 3V, VVCTL = VICTL = 0.75 x VREFIN, CELLS = float, CLS =
REF, VBST - VLX = 4.5V, ACIN = GND = PGND = 0, CLDO = 1µF, LDO = DLOV, CREF = 1µF; CCI, CCS, and CCV are compensated
per Figure 1a;
TA = 0°C to +85°C , unless otherwise noted. Typical values are at TA = +25°C.)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
REF Undervoltage Lockout Trip
Point
VREF falling 3.1 3.9 V
TRIP POINTS
BATT Power-Fail Threshold VDCIN falling, referred to VCSIN 50 100 150 mV
BATT Power-Fail Threshold
Hysteresis
200 mV
ACIN Threshold ACIN rising 2.007 2.048 2.089 V
ACIN Threshold Hysteresis 0.5% of REF 20 mV
ACIN Input Bias Current VACIN = 2.048V -1 +1 µA
SWITCHING REGULATOR
DHI Off-Time
VBATT = 16V, VDCIN = 19V,
VCELLS = VREFIN
0.36 0.4 0.44 µs
DHI Minimum Off-Time
VBATT = 16V, VDCIN = 17V,
VCELLS = VREFIN
0.24 0.28 0.33 µs
DHI Maximum On-Time 2.5 5 7.5 ms
DLOV Supply Current IDLOV DLO low 5 10 µA
BST Supply Current IBST DHI high 6 15 µA
BST Input Quiescent Current
VDCIN = 0, VBST = 24.5V,
VBATT = VLX = 20V
0.3 1 µA
LX Input Bias Current VDCIN = 28V, VBATT = VLX = 20V 150 500 µA
LX Input Quiescent Current VDCIN = 0, VBATT = VLX = 20V 0.3 1 µA
DHI Maximum Duty Cycle 99 99.9 %
Minimum Discontinuous Mode
Ripple Current
0.5 A
Battery Undervoltage Charge
Current
VBATT = 3V per cell (RS2 = 15m
Ω
) 150 300 450 mA
CELLS = GND 6.1 6.2 6.3
CELLS = float 9.15 9.3 9.45
Battery Undervoltage Current
Threshold
CELLS = VREFIN 12.2 12.4 12.6
V
DHI On-Resistance High VBST - VLX = 4.5V, IDHI = +100mA 4 7
Ω
DHI On-Resistance Low VBST - VLX = 4.5V, IDHI = -100mA 1 3.5
Ω
DLO On-Resistance High VDLOV = 4.5V, IDLO = +100mA 4 7
Ω
DLO On-Resistance Low VDLOV = 4.5V, IDLO = -100mA 1 3.5
Ω
ERROR AMPLIFIERS
GMV Amplifier Transconductance GMV
V V C T L = V LD O, V BAT T = 16.8V ,
C E LLS = V RE F IN
0.0625 0.125 0.250 µA/mV
GMI Amplifier Transconductance GMI VICTL = V RE F IN , VCSIP - VCSIN = 75mV 0.5 1 2.0 µA/mV
ELECTRICAL CHARACTERISTICS (continued)
(VDCIN = VCSSP = VCSSN = 18V, VBATT = VCSIP = VCSIN = 12V, VREFIN = 3V, VVCTL = VICTL = 0.75 x VREFIN, CELLS = float, CLS =
REF, VBST - VLX = 4.5V, ACIN = GND = PGND = 0, CLDO = 1µF, LDO = DLOV, CREF = 1µF; CCI, CCS, and CCV are compensated
per Figure 1a;
TA = 0°C to +85°C , unless otherwise noted. Typical values are at TA = +25°C.)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
GMS Amplifier Transconductance GMS VCLS = VREF, VCSSP - VCSSN = 75mV 0.5 1 2.0 µA/mV
CCI, CCS, CCV Clamp Voltage 0.25V < VCCV,CCS,CCI < 2V 150 300 600 mV
LOGIC LEVELS
CELLS Input Low Voltage 0.4 V
CELLS Input Float Voltage CELLS = float
(VREFIN
/ 2) -
0.2V
VREFIN
/ 2
( V R E F IN
/ 2) +
0.2V
V
CELLS Input High Voltage
VREFIN
- 0.4V
V
CELLS Input Bias Current CELLS = 0 or VREFIN -2 +2 µA
ACOK
AND
SHDN
ACOK
Input Voltage Range 0 28 V
ACOK
Sink Current V ACOK
= 0.4V, VACIN = 3V
1 mA
ACOK
Leakage Current V ACOK
= 28V, VACIN = 0
1 µA
SHDN
Input Voltage Range 0 LDO V
V SHDN = 0 or VLDO -1 +1
SHDN
Input Bias Current
VDCIN = 0, V
SHDN
= 5V -1 +1
µA
SHDN
Threshold V SHDN falling 22 23.5 25
% of
VREFIN
SHDN
Threshold Hysteresis 1
% of
VREFIN
ELECTRICAL CHARACTERISTICS
(VDCIN = VCSSP = VCSSN = 18V, VBATT = VCSIP = VCSIN = 12V, VREFIN = 3V, VVCTL = VICTL = 0.75 x VREFIN, CELLS = FLOAT, CLS =
REF, VBST - VLX = 4.5V, ACIN = GND = PGND = 0, CLDO = 1µF, LDO = DLOV, CREF = 1µF; CCI, CCS, and CCV are compensated
per Figure 1a;
TA = -40°C to +85°C , unless otherwise noted.) (Note 2)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
CHARGE VOLTAGE REGULATION
VVCTL = VREFIN (2, 3, or 4 cells) -0.6 +0.6
VVCTL = VREFIN/20 (2, 3, or 4 cells) -0.6 +0.6
Battery Regulation Voltage
Accuracy
VVCTL = VLDO (2, 3, or 4 cells) -0.6 +0.6
%
REFIN Range (Note 1) 2.5 3.6 V
REFIN Undervoltage Lockout VREFIN falling 1.92 V
CHARGE CURRENT REGULATION
CSIP-to-CSIN Full-Scale Current-
Sense Voltage
VICTL = VREFIN 70.5 79.5 mV
VICTL = VREFIN -7.5 +7.5
VICTL = VREFIN
×
0.6 -7.5 +7.5
VICTL = VREFIN/32 -10 +10
Charging Current Accuracy
VICTL = VLDO -7.5 +7.5
%
BATT/CSIP/CSIN Input Voltage
Range
0 19 V
VDCIN = 0 or VICTL = 0 or
SHDN
= 0 1
CSIP/CSIN Input Current
VCSIP = VCSIN = 12V 600
µA
Cycle-by-Cycle Maximum Current
Limit
IMAX RS2 = 0.015
Ω
6.0 7.5 A
ICTL Power-Down Mode
Threshold Voltage
VICTL rising
REFIN /
100
REFIN /
33
V
ICHG Transconductance GICHG VCSIP - VCSIN = 45mV 2.7 3.3 µA/mV
VCSIP - VCSIN = 75mV -7.5 +7.5
VCSIP - VCSIN = 45mV -7.5 +7.5 ICHG Accuracy
VCSIP - VCSIN = 5mV -40 +40
%
INPUT CURRENT REGULATION
CSSP-to-CSSN Full-Scale
Current-Sense Voltage
71.25 78.75 mV
VCLS = VREF -7.5 +7.5
Input Current-Limit Accuracy
VCLS = VREF / 2 -7.5 +7.5
%
CSSP, CSSN Input Voltage
Range
8 28 V
VDCIN = 0 1
CSSP, CSSN Input Current
VCSSP = VCSSN = VDCIN > 8V 600
µA
CLS Input Range 1.6 REF V
IINP Transconductance GIINP VCSSP - VCSSN = 75mV 2.7 3.3 µA/mV
VCSSP - VCSSN = 75mV -7.5 +7.5
IINP Accuracy
VCSSP - VCSSN = 37.5mV -7.5 +7.5
%
ELECTRICAL CHARACTERISTICS (continued)
(VDCIN = VCSSP = VCSSN = 18V, VBATT = VCSIP = VCSIN = 12V, VREFIN = 3V, VVCTL = VICTL = 0.75 x VREFIN, CELLS = FLOAT, CLS =
REF, VBST - VLX = 4.5V, ACIN = GND = PGND = 0, CLDO = 1µF, LDO = DLOV, CREF = 1µF; CCI, CCS, and CCV are compensated
per Figure 1a;
TA = -40°C to +85°C , unless otherwise noted.) (Note 2)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
SUPPLY AND LDO REGULATOR
DCIN Input Voltage Range VDCIN 8 28 V
DCIN Quiescent Current IDCIN 8V < VDCIN < 28V 6 mA
VBATT = 19V, VDCIN = 0 1
BATT Input Current IBATT
VBATT = 2V to 19V, VDCIN = 19.3V 500
µA
LDO Output Voltage 8V < VDCIN < 28V, no load 5.25 5.55 V
LDO Load Regulation 0 < ILDO < 10mA 100 mV
REFERENCE
REF Output Voltage 0 < IREF < 500µA 4.065 4.120 V
TRIP POINTS
BATT Power-Fail Threshold VDCIN falling, referred to VCSIN 50 150 mV
ACIN Threshold VACIN rising 2.007 2.089 V
SWITCHING REGULATOR
DHI Off-Time
VBATT = 16V, VDCIN = 19V,
VCELLS = VREFIN
0.35 0.45 µs
DHI Minimum Off-Time
VBATT = 16V, VDCIN = 17V,
VCELLS = VREFIN
0.24 0.33 µs
DHI Maximum On-Time 2.5 7.5 ms
DHI Maximum Duty Cycle 99 %
Battery Undervoltage Charge
Current
VBATT = 3V per cell (RS2 = 15m
Ω
) 150 450 mA
CELLS = GND 6.09 6.3
CELLS = float 9.12 9.45
Battery Undervoltage Current
Threshold
CELLS = VREFIN 12.18 12.6
V
DHI On-Resistance High VBST - VLX = 4.5V, IDHI = +100mA 7
Ω
DHI On-Resistance Low VBST - VLX = 4.5V, IDHI = -100mA 3.5
Ω
DLO On-Resistance High VDLOV = 4.5V, IDLO = +100mA 7
Ω
DLO On-Resistance Low VDLOV = 4.5V, IDLO = -100mA 3.5
Ω
ERROR AMPLIFIERS
GMV Amplifier Transconductance GMV
V V C T L = V LD O, V BAT T = 16.8V ,
C E LLS = V RE F IN
0.0625 0.250 µA/mV
GMI Amplifier Transconductance GMI VICTL = V RE F IN , VCSIP - VCSIN = 75mV 0.5 2.0 µA/mV
GMS Amplifier Transconductance GMS VCLS = VREF, VCSSP - VCSSN = 75mV 0.5 2.0 µA/mV
CCI, CCS, CCV Clamp Voltage 0.25V < VCCV,CCS,CCI < 2V 150 600 mV
LOGIC LEVELS
CELLS Input Low Voltage 0.4 V