9-12
Samsung Electronics
Glossary
Tip pipe
:
(Refer to exhaust turbulation.)
Townsend discharge
:
Self sustained plasma discharge expressed by Townsend in 1901. This discharge requires 200v voltage.
Transparent electrode
:
Electrode made up of transparent electric conductive matter such as ITO.
Two eledtrode type
:
Original AC plasma panel used two electrodes that provide not only sustained waveform but also write
and erase waveform.
Ultraviolet ray
:
Ultraviolet light below 380nm in spectrum.
Vacuum ultraviolet
:
Ultraviolet ray of wavelength below 200nm.
Viewing angle
:
Vertical angle that can display the image. It is normally limited by the change in luminance and chromatici-
ty.
Viewrable screen diagonal
:
Releasable screen diagonal length measured between outmost pixel edges
Viewrabel screen height
:
Releasable screen height measured between outmost pixel edges
Viewrable screen width
:
Releasable screen width measured between outmost pixel edges.
Visible defect
:
Imperfection that prevents displaying with proper image.
Wall charge
:
Pure accumulation of positive and negative charges in cell wall.
Wall charge erase pulse
:
Pulse that neutralizes wall charge
Wall charge transfer curve
:
Curve related to wall charge pulse parameters and the changes in wall charge.
Wall voltage transfer curve
:
Curve expressed with wall transfer that is caused by any changes in electric charges including wall charges
and wall charge pulse related parameters.
White back
:
White coating for minimize absorbing valid gloss, located black contrast improvement layer and fluores-
cent material.
Write electrode :
(
Refer to data electrode.)
Содержание D61B
Страница 10: ...3 2 Samsung Electronics MEMO ...
Страница 20: ...4 10 Samsung Electronics 4 11 1Sub field Process Address 1 4 12 1Sub field Process Address 2 Introduction PDP ...
Страница 21: ...Introduction PDP Samsung Electronics 4 11 4 13 1Sub field Process Address 3 4 14 1Sub field Process Address 4 ...
Страница 22: ...Introduction PDP 4 12 Samsung Electronics 4 15 1Sub field Process Address 5 4 16 1Sub field Process Address 6 ...
Страница 23: ...Introduction PDP Samsung Electronics 4 13 4 17 1Sub field Process Address 7 4 18 1Sub field Process Address 8 ...
Страница 24: ...Introduction PDP 4 14 Samsung Electronics 4 20 1Sub field Process Sustain 4 19 1Sub field Process Address 9 ...
Страница 30: ...4 20 Samsung Electronics MEMO ...
Страница 38: ...Alignment and Adjustments 2 8 Samsung Electronics MEMO ...
Страница 61: ...Fig 18 Chopper Circuit 6 22 Samsung Electronics Circuit Operation Description ...
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Страница 105: ...Schematic Diagrams 10 6 Samsung Electronics 10 6 SMPS 1 This Document can not be used without Samsung s authorization ...
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