14
Principles of Operation
The RBD Model 04
-
165 2 kV Backfill Ion Source is used with the RBD Model 32
-175 Ion Source
Control. Together with the appropriate gas admission system such as the RBD IG2
-
AGA, these
units comprise
a
complete
system
designed
to sputter-
etch
a
specimen
surface
using
inert-
gas
ions.
The
ion
gun is CF flange mounted and can be installed in standard vacuum systems. The
control unit contains all the electronics and power supplies necessary for operating the ion source.
The Model RBD Model 04
-
165 2 kV
Backfill Ion Source generates an energetic inert
-
gas ion
beam for
sputter-
etching
solid
surfaces.
In
operation,
the
test
chamber
is
backfilled
to
a
static
pressure
of
5 x
10
-5
torr
with
an
inert
gas
such
as
argon.
Positive
ions
are
created
by
electron
impact
within
the
ion
gun’s
ionization
chamber.
The
ions
are
then
extracted
from
the
ionization
chamber,
accelerated
through a focusing lens, and directed at a specimen with
energies up to 2 keV. The impurity content of the ion beam
is
minimized
because
there
is no
direct line
of
sight
from
the
hot
filament
to
the
target.
Operating
parameters
are
adjustable
on
the front
panel of
the
Model 32
-175 Ion Source Control. Focus,
beam voltage
selection,
filament
selection,
and
emission
are
all
controlled
by
the
ion
gun
control.
Appendix – Cable Diagrams
The
cable
diagram
for
the
cable
included
with
the
IG2
is
provided
in
this
appendix.
We
have
also
included cable diagrams for the optional cables that are available to integrate the RBD
04-
165 ion source with the PHI controller and the RBD 32
-17
5 ion source control with the PHI
ion guns
.