FEDD56V16160F-02
1
Semiconductor
MSM56V16160F
20/31
Bank Interleave Page Read/Write Cycle @
CAS
CAS
CAS
CAS
Latency=2, Burst Length=4
CLK
CKE
CS
RAS
CAS
ADDR
A11
A10
DQ
WE
UDQM,
LDQM
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19
CAa0
CBb0
CAc0
QAa0 QAa1 QAa2 QAa3
Read Command
(A-Bank)
Write Command
(B-Bank)
Read Command
(A-Bank)
DBb0 DBb1 DBb2 DBb3
QAc0 QAc1
High
QAc2 QAc3
Содержание CE130/55
Страница 8: ...3 BLOCK DIAGRAM ...
Страница 9: ...4 WIRING DIAGRAM ...
Страница 10: ...5 CIRCUIT DIAGRAM MAIN BOARD ...
Страница 11: ...6 CIRCUIT DIAGRAM MAIN BOARD ...
Страница 14: ...MAIN PCB COMPONENT LAYOUT TOP SIDE VIEW 9 ...
Страница 15: ...MAIN PCB COMPONENT LAYOUT BOTTOM SIDE VIEW 10 ...
Страница 16: ...PANEL PCB COMPONENT LAYOUT TOP SIDE VIEW 11 ...
Страница 17: ...PANEL PCB COMPONENT LAYOUT BOTTOM VIEW PANEL PCB COMPONENT LAYOUT BOTTOM VIEW 12 ...
Страница 18: ...TUNER PCB COMPONENT LAYOUT TOP SIDE VIEW 13 ...
Страница 19: ...TUNER PCB COMPONENT LAYOUT BOTTOM IDE S VIEW 14 ...
Страница 20: ...SET EXPLODER VIEW DRAWING 15 ...
Страница 22: ...BX8804 8805 User s Manual Revision 0 93 May 23 2008 ...
Страница 30: ...BX8804 8805 9 21 1 PRODUCT OVERVIEW ...
Страница 39: ...BX8804 8805 18 21 20 PACKAGE DIMENSIONS ...
Страница 41: ...BX8804 8805 20 21 21 ELECTRICAL CHARACTERISTICS ...