NXP Semiconductors TDA1519C, Техническое описание

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2004 Jan 28 8
NXP Semiconductors Product specification
22 W BTL or 2

11 W
stereo power amplifier
TDA1519C
AC CHARACTERISTICS
V
P
= 14.4 V; R
L
= 4

; f = 1 kHz; T
amb
= 25

C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Stereo application (see Fig.6)
P
o
output power note 1
THD = 0.5 % 4 5

W
THD = 10 % 5.5 6.0

W
R
L
= 2

; note 1
THD = 0.5 % 7.5 8.5

W
THD = 10 % 10 11

W
THD total harmonic distortion P
o
= 1 W

0.1

%
f
ro(l)
low frequency roll-off

3 dB; note 2

45

Hz
f
ro(h)
high frequency roll-off

1 dB 20
 
kHz
G
v(cl)
closed-loop voltage gain 39 40 41 dB
SVRR supply voltage ripple rejection on; notes 3 and 4 40
 
dB
on; notes 3 and 5 45
 
dB
mute; notes 3 and 6 45
 
dB
standby; notes 3
and 6 80
 
dB

Z
i

input impedance 50 60 75 k

V
n(o)(rms)
noise output voltage (RMS value) note 7
on; R
S
= 0
 
150
 
V
on; R
S
= 10 k
 
250 500

V
mute; note 8

120
 
V

cs
channel separation R
S
= 10 k

40
 
dB

G
v(ub)

channel unbalance

0.1 1 dB
BTL application (see Fig.7)
P
o
output power note 1
THD = 0.5 % 15 17

W
THD = 10 % 20 22

W
V
P
= 13.2 V; note 1
THD = 0.5 %

13

W
THD = 10 %

17.5

W
THD total harmonic distortion P
o
= 1 W

0.1

%
B
p
power bandwidth THD = 0.5 %;
P
o
=

1 dB; with
respect to 15 W

35 to 15000

Hz
f
ro(l)
low frequency roll-off

1 dB; note 2

45

Hz
f
ro(h)
high frequency roll-off

1 dB 20
 
kHz
G
v(cl)
closed-loop voltage gain 45 46 47 dB