NXP Semiconductors TDA1519C, Техническое описание

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2004 Jan 28 7
NXP Semiconductors Product specification
22 W BTL or 2

11 W
stereo power amplifier
TDA1519C
THERMAL CHARACTERISTICS
DC CHARACTERISTICS
V
P
= 14.4 V; T
amb
= 25

C; measured in circuit of Fig.6; unless otherwise specified.
Notes
1. The circuit is DC adjusted at V
P
= 6 to 17.5 V and AC operating at V
P
= 8.5 to 17.5 V.
2. At V
P
= 17.5 to 30 V, the DC output voltage is

0.5V
P
.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient;
TDA1519C, TDA1519CTH and TDA1519CTD in free air 40 K/W
R
th(j-c)
thermal resistance from junction to case;
TDA1519C, TDA1519CTH and TDA1519CTD 3 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supply
V
P
supply voltage note 1 6.0 14.4 17.5 V
I
q(tot)
total quiescent current

40 80 mA
V
O
DC output voltage note 2

6.95

V

V
OO

DC output offset voltage
 
250 mV
Mute/standby switch
V
sw(on)
switch-on voltage level 8.5
 
V
V
mute
mute voltage level 3.3

6.4 V
V
stb
standby voltage level 0

2 V
Mute/standby condition
V
o
output voltage mute mode; V
i
= 1 V (maximum);
f
i
= 20 Hz to 15 kHz
 
20 mV

V
OO

DC output offset voltage mute mode
 
250 mV
I
stb
standby current standby mode
 
100

A
I
sw(on)
switch-on current

12 40

A