
Table 29-3. Allowed Simultaneous Memory Operations
Program Flash 0
Program Flash 1
Read
Program
Sector Erase
Read
Program
Sector Erase
Program
flash 0
Read
—
OK
OK
Program
—
OK
Sector Erase
—
OK
Program
flash 1
Read
OK
OK
—
Program
OK
—
Sector Erase
OK
—
29.4.10 Margin Read Commands
The Read-1s commands (Read 1s All Blocks, Read 1s Block, Read 1s Section, Read 1s
All Execute-only Segments) and the Program Check command have a margin choice
parameter that allows the user to apply non-standard read reference levels to the program
flash array reads performed by these commands. Using the preset 'user' and 'factory'
margin levels, these commands perform their associated read operations at tighter
tolerances than a 'normal' read. These non-standard read levels are applied only during
the command execution. Basic flash array reads use the standard, un-margined, read
reference level.
Only the 'normal' read level should be employed during normal flash usage. The non-
standard, 'user' and 'factory' margin levels should be employed only in special cases.
They can be used during special diagnostic routines to gain confidence that the device is
not suffering from the end-of-life data loss customary of flash memory devices.
Erased ('1') and programmed ('0') bit states can degrade due to elapsed time and data
cycling (number of times a bit is erased and re-programmed). The lifetime of the erased
states is relative to the last erase operation. The lifetime of the programmed states is
measured from the last program time.
The 'user' and 'factory' levels become, in effect, a minimum safety margin; i.e. if the reads
pass at the tighter tolerances of the 'user' and 'factory' margins, then the 'normal' reads
have at least this much safety margin before they experience data loss.
The 'user' margin is a small delta to the normal read reference level. 'User' margin levels
can be employed to check that flash memory contents have adequate margin for normal
level read operations. If unexpected read results are encountered when checking flash
memory contents at the 'user' margin levels, loss of information might soon occur during
'normal' readout.
Functional Description
K22F Sub-Family Reference Manual, Rev. 4, 08/2016
658
NXP Semiconductors
Содержание K22F series
Страница 2: ...K22F Sub Family Reference Manual Rev 4 08 2016 2 NXP Semiconductors...
Страница 150: ...Private Peripheral Bus PPB memory map K22F Sub Family Reference Manual Rev 4 08 2016 150 NXP Semiconductors...
Страница 168: ...Module clocks K22F Sub Family Reference Manual Rev 4 08 2016 168 NXP Semiconductors...
Страница 198: ...Security Interactions with other Modules K22F Sub Family Reference Manual Rev 4 08 2016 198 NXP Semiconductors...
Страница 258: ...Functional description K22F Sub Family Reference Manual Rev 4 08 2016 258 NXP Semiconductors...
Страница 292: ...Functional description K22F Sub Family Reference Manual Rev 4 08 2016 292 NXP Semiconductors...
Страница 398: ...Functional description K22F Sub Family Reference Manual Rev 4 08 2016 398 NXP Semiconductors...
Страница 628: ...Initialization and application information K22F Sub Family Reference Manual Rev 4 08 2016 628 NXP Semiconductors...
Страница 740: ...Initialization Application Information K22F Sub Family Reference Manual Rev 4 08 2016 740 NXP Semiconductors...
Страница 750: ...Functional description K22F Sub Family Reference Manual Rev 4 08 2016 750 NXP Semiconductors...
Страница 816: ...Application information K22F Sub Family Reference Manual Rev 4 08 2016 816 NXP Semiconductors...
Страница 866: ...Initialization Application Information K22F Sub Family Reference Manual Rev 4 08 2016 866 NXP Semiconductors...
Страница 890: ...Application information K22F Sub Family Reference Manual Rev 4 08 2016 890 NXP Semiconductors...
Страница 1028: ...Initialization Procedure K22F Sub Family Reference Manual Rev 4 08 2016 1028 NXP Semiconductors...
Страница 1040: ...Example configuration for chained timers K22F Sub Family Reference Manual Rev 4 08 2016 1040 NXP Semiconductors...
Страница 1118: ...Device mode IRC48 operation K22F Sub Family Reference Manual Rev 4 08 2016 1118 NXP Semiconductors...
Страница 1122: ...USB Voltage Regulator Module Signal Descriptions K22F Sub Family Reference Manual Rev 4 08 2016 1122 NXP Semiconductors...
Страница 1180: ...Initialization application information K22F Sub Family Reference Manual Rev 4 08 2016 1180 NXP Semiconductors...
Страница 1302: ...Application information K22F Sub Family Reference Manual Rev 4 08 2016 1302 NXP Semiconductors...
Страница 1374: ...Functional description K22F Sub Family Reference Manual Rev 4 08 2016 1374 NXP Semiconductors...