User’s Manual U16896EJ2V0UD
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CHAPTER 26 FLASH MEMORY
The following products are the flash memory versions of the V850ES/KE1+.
Caution There are differences in noise immunity and noise radiation between the flash memory and mask
ROM versions. When pre-producing and application set with the flash memory version and then
mass-producing it with the mask ROM version, be sure to conduct sufficient evaluation for the
commercial samples (not engineering samples) of the mask ROM version.
For the electrical specifications related to the flash memory rewriting, refer to CHAPTER 28
ELECTRICAL SPECIFICATIONS.
•
μ
PD70F3302, 70F3302Y: On-chip 128 KB flash memory
Flash memory versions are commonly used in the following development environments and mass production
applications.
{
For altering software after the V850ES/KE1+ is soldered onto the target system.
{
For data adjustment when starting mass production.
{
For differentiating software according to the specification in small scale production of various models.
{
For facilitating inventory management.
{
For updating software after shipment.
26.1 Features
{
4-byte/1-clock access (when instruction is fetched)
{
Capacity: 128 KB
{
Write voltage: Erase/write with a single power supply
{
Rewriting method
•
Rewriting by communication with dedicated flash programmer via serial interface (on-board/off-board
programming)
•
Rewriting flash memory by user program (self programming)
{
Flash memory write prohibit function supported (security function)
{
Safe rewriting of entire flash memory area by self programming using boot swap function
{
Interrupts can be acknowledged during self programming.
Содержание V850ES/KE1+
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