1031
Chapter 25
Electrical Specifications
User’s Manual U16580EE3V1UD00
25.6 Flash Programming Characteristics
Unless specified otherwise, the following conditions are assumed for all characteristics in this chapter.
V
DD3x
= AV
DD
= 3.0 V to 3.6 V
V
DD1x
= CV
DD
= 1.35 V to 1.65 V
V
SS1x
= CV
SS
= V
SS3x
= AV
SSx
= 0 V
Table 25-19:
Flash Memory Basic Characteristics
Parameter
Condition
Symbol
MIN.
TYP.
MAX.
Unit
Number of rewrites
C
WRT
100
times/
block
Ambient programming
temperature
T
APRG
-40
+100
°C
Data retention time
6000 h key-on time
15
years
Table 25-20:
Flash Memory Programming Characteristics
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Write time
30
300
µs/ word
Erase time
0.2
2
s
Содержание MuPD70F3187
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Страница 84: ...84 Chapter 2 Pin Functions User s Manual U16580EE3V1UD00 MEMO ...
Страница 144: ...144 Chapter 3 CPU Functions User s Manual U16580EE3V1UD00 MEMO ...
Страница 192: ...192 Chapter 5 Memory Access Control Function μPD70F3187 only User s Manual U16580EE3V1UD00 MEMO ...
Страница 312: ...312 Chapter 9 16 Bit Timer Event Counter P User s Manual U16580EE3V1UD00 MEMO ...
Страница 534: ...534 Chapter 11 16 bit Timer Event Counter T User s Manual U16580EE3V1UD00 ...
Страница 969: ...969 Chapter 20 Port Functions User s Manual U16580EE3V1UD00 MEMO ...
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Страница 976: ...976 Chapter 22 Internal RAM Parity Check Function User s Manual U16580EE3V1UD00 MEMO ...
Страница 984: ...984 Chapter 23 On Chip Debug Function OCD User s Manual U16580EE3V1UD00 MEMO ...
Страница 1006: ...1006 Chapter 24 Flash Memory User s Manual U16580EE3V1UD00 MEMO ...
Страница 1036: ...1036 Chapter 27 Recommended Soldering Conditions User s Manual U16580EE3V1UD00 MEMO ...
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