1014
Chapter 25
Electrical Specifications
User’s Manual U16580EE3V1UD00
25.4.2 External asynchronous memory access write timing
Table 25-7:
External Asynchronous Memory Access Write Timing
Remarks: 1.
T:
2/f
XX
2.
i:
Number of idle states specified by BCC register
3.
w
AS
: Number of waits specified by ASC register
4.
w
D
: Number of waits specified by DWC1, DWC2 register; w
D
≥
1
5.
w:
Number of waits due to external wait signal (WAIT)
6.
n = 0, 1, 3, 4
Parameter
Symbol
MIN.
MAX.
Unit
Address, CSn
→
WR
↓
delay time
<20>
T
DAWR
(1 + w
AS
)T - 20
ns
Address set up (vs. WR
↑
)
<21>
T
SAWR
(1.5 + w
AS
+ w
D
+ w) T - 10
ns
WR
↑
→
address delay time
<22>
T
DWRA
(0.5 + i) T - 5
ns
WR High level width
<23>
T
WWRH
(1.5 + i + w
AS
) T - 15
ns
WR Low level width
<24>
T
WWRL
(0.5 + w + w
D
) T - 12
ns
Data output set up time
(vs. WR
↑
)
<25> T
SODWR
(0.5 + w
AS
+ w
D
+ w) T - 15
ns
Data output hold time
(vs. WR
↑
)
<26> T
HWROD
(0.5 + i) T - 15
ns
WAIT set up time
(vs. address)
<31>
T
SAW
(1 + w
AS
)T - 30
ns
WAIT high level width
<32>
T
WWH
T - 2
ns
Содержание MuPD70F3187
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