14.0 Preliminary Electrical Characteristics
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Supply Voltage (V
CC
)
b
0.5V to
a
7.0V
DC Input Voltage (V
IN
)
b
0.5V to V
CC
a
0.5V
DC Output Voltage (V
OUT
)
b
0.5V to V
CC
a
0.5V
Storage Temperature Range (T
STG
)
b
65
§
C to
a
150
§
C
Power Dissipation (PD)
800 mW
Lead Temp. (TL) (Soldering, 10 sec.)
260
§
C
ESD Rating (R
ZAP
e
1.5k, C
ZAP
e
100 pF)
1.5 kV
Pin to Pin
Pin to GND
Pin to V
CC
(
g
1 ZAP)
Clamp Diode Current
g
20 mA
Note:
Absolute Maximum ratings are those values beyond
which the safety of the device cannot be guaranteed. They
are not meant to imply that the device should be operated at
these limits.
Note:
All specifications in this datasheet are valid only if the
mandatory isolation is employed and all differential signals
are taken to exist at the AUI or TPI side of the isolation.
Preliminary DC Specifications
T
A
e
0
§
C to 70
§
C, V
CC
e
5V
g
5%, unless otherwise specified.
Symbol
Parameter
Conditions
Min
Max
Units
V
OH
Minimum High Level Output Voltage
I
OH
e b
20
m
A
V
CC
b
0.1
V
(Notes 1, 4)
I
OH
e b
2.0 mA
3.5
V
V
OL
Minimum Low Level Output Voltage
I
OL
e
20
m
A
0.1
V
(Notes 1, 4)
I
OL
e
2.0 mA
0.4
V
V
IH
Minimum High Level Input Voltage (Note 2)
2.0
V
V
IH2
Minimum High Level Input Voltage
2.7
V
For RACK WACK (Note 2)
V
IL
Maximum Low Level Input Voltage (Note 2)
0.8
V
V
IL2
Maximum Low Level Input Voltage
0.6
V
For RACK, WACK (Note 2)
V
LOL
Good Link Output Voltage
I
OL
e
16 mA
0.4
V
I
IN
Input Current
V
I
e
V
CC
or GND
b
1.0
a
1.0
m
A
I
INSEL
Input Current
V
IN
e
V
CC
50
2000
m
A
V
IN
e
GND
b
1
a
1
m
A
I
OZ
Minimum TRI-STATE
V
OUT
e
V
CC
or GND
b
10
a
10
m
A
Output Leakage Current (Note 5)
I
CC
Average Supply Current
X1
e
20 MHz Clock
(Note 3)
I
OUT
e
0
m
A
140
mA
V
IN
e
V
CC
or GND
Note 1:
These levels are tested dynamically using a limited amount of functional test patterns, please refer to AC test load.
Note 2:
Limited functional test patterns are performed at these input levels. The majority of functional tests are performed at levels of 0V and 3V.
Note 3:
This is measured with a 0.1
m
F bypass capacitor between V
CC
and GND.
Note 4:
The low drive CMOS compatible V
OH
and V
OL
limits are not tested directly. Detailed device characterization validates that this specification can be
guaranteed by testing the high drive TTL compatible V
OL
and V
OH
specification.
Note 5:
RA0–RA3, PRD, WACK, BREQ and INT pins are used as outputs in test mode and as a result are tested as if they are TRI-STATE input/outputs. For these
pins the input leakage specification is I
OZ
.
50
Obsolete